Publikationen

2018

Begutachteter Zeitschriftenartikel

Schlehahn, Alexander;  Fischbach, Sarah;  Schmidt, Ronny;  Kaganskiy, Arsenty;  Strittmatter, André;  Rodt, Sven;  Heindel, Tobias;  Reitzenstein, Stephan 

A stand-alone fiber-coupled single-photon source
In: Scientific reports - [London]: Macmillan Publishers Limited, part of Springer Nature, Vol. 8.2018, Art. 1340, insgesamt 7 S.; http://dx.doi.org/10.1038/s41598-017-19049-4

Quandt, David;  Bläsing, Jürgen;  Strittmatter, André 

Analysis of InAsSb/GaAs submonolayer stacks
In: Journal of crystal growth - Amsterdam [u.a.]: Elsevier, Bd. 494.2018, S. 1-7; http://dx.doi.org/10.1016/j.jcrysgro.2018.04.031

Srocka, N.;  Musiał, A.;  Schneider, P.-I.;  Mrowiński, P.;  Holewa, P.;  Burger, S.;  Quandt, D.;  Strittmatter, André;  Rodt, S.;  Reitzenstein, S.;  Sȩk, G. 

Enhanced photon-extraction efficiency from InGaAs/GaAs quantum dots in deterministic photonic structures at 1.3 m fabricated by in-situ electron-beam lithography
In: AIP Advances - New York, NY: American Inst. of Physics, Vol. 8.2018, 8, Art. 085205, insgesamt 10 S.; http://dx.doi.org/10.1063/1.5038137

Kaganskiy, Arsenty;  Fischbach, Sarah;  Strittmatter, André;  Rodt, Sven;  Heindel, Tobias;  Reitzenstein, Stephan 

Enhancing the photon-extraction efficiency of site-controlled quantum dots by deterministically fabricated microlenses
In: Optics communications - Amsterdam, Bd. 413.2018, S. 162-166; http://dx.doi.org/10.1016/j.optcom.2017.12.032

Mehlhose, Sven;  Frenkel, Nataliya;  Uji, Hirotaka;  Hölzel, Sara;  Müntze, Gesche;  Stock, Daniel;  Neugebauer, Silvio;  Dadgar, Armin;  Abuillan, Wasim;  Eickhoff, Martin;  Kimura, Shunsaku;  Tanaka, Motomu 

Flexible modulation of electronic band structures of wide band gap GaN semiconductors using bioinspired, nonbiological helical peptides
In: Advanced functional materials - Weinheim: Wiley-VCH, Vol. 28.2018, 2, Art. 1704034; http://dx.doi.org/10.1002/adfm.201704034

Zhang, Yuhao;  Dadgar, Armin;  Palacios, Tomás 

Gallium nitride vertical power devices on foreign substrates - a review and outlook
In: Journal of physics / D - Bristol: IOP Publ, Vol. 51.2018, 27, Art. 273001, insgesamt 14 S.; http://dx.doi.org/10.1088/1361-6463/aac8aa

Bounouar, Samir;  Haye, Christoph;  Strauß, Max;  Schnauber, Peter;  Thoma, Alexander;  Gschrey, Manuel;  Schulze, Jan-Hindrik;  Strittmatter, André;  Rodt, Sven;  Reitzenstein, Stephan 

Generation of maximally entangled states and coherent control in quantum dot microlenses
In: Applied physics letters - Melville, NY: American Inst. of Physics, Vol. 112.2018, 15, Art. 153107, insgesamt 6 S.; http://dx.doi.org/10.1063/1.5020242

Yacoub, Hady;  Zweipfennig, Thorsten;  Kalisch, Holger;  Vescan, Aandrei;  Dadgar, Armin;  Wieneke, Matthias;  Bläsing, Jürgen;  Strittmatter, André;  Rennesson, Stephanie;  Semond, Fabrice 

Impact of AlN/Si Nucleation Layers Grown Either by NH3-MBE or MOCVD on the Properties of AlGaN/GaN HFETs
In: Physica status solidi / A - Weinheim: Wiley-VCH, Vol. 215.2018, 9, Art. 1700638; http://dx.doi.org/10.1002/pssa.201700638

Feneberg, Martin;  Winkler, Michael;  Lange, Karsten;  Wieneke, Matthias;  Witte, Hartmut;  Dadgar, Armin;  Goldhahn, Rüdiger 

Valence band tomography of wurtzite GaN by spectroscopic ellipsometry
In: Applied physics express: APEX - Tokyo: Ōyō Butsuri-Gakkai, Vol. 11.2018, 10, Art. 101001; http://dx.doi.org/10.7567/apex.11.101001

Buchbeitrag

Žołnacz, Kinga;  Urbańczyk, Wacław;  Srocka, Nicole;  Heuser, Tobias;  Quandt, David;  Strittmatter, André;  Rodt, Sven;  Reitzenstein, Stephan;  Musiał, Anna;  Mrowiński, Paweł;  Sek, Grzegorz;  Poturaj, Krzysztof;  Wójcik, Grzegorz;  Mergo, Paweł;  Dybka, Kamil;  Dyrkacz, Marius;  Dłubek, Michał 

Semiconductor quantum dot to fiber coupling system for 1.3m range
In: Proceedings of SPIE - Bellingham, Wash: SPIE, Vol. 10674.2018, Art. 106741R; http://dx.doi.org/10.1117/12.2306179 ; [SPIE Photonics Europe, Strasbourg, France, 22-26 April 2018]

2017

Begutachteter Zeitschriftenartikel

Heindel, T.;  Thoma, A.;  Helversen, M.;  Schmidt, M.;  Schlehahn, A.;  Gschrey, M.;  Schnauber, P.;  Schulze, J.-H.;  Strittmatter, André;  Beyer, J.;  Rodt, S.;  Carmele, A.;  Knorr, A.;  Reitzenstein, S. 

A bright triggered twin-photon source in the solid state
In: Nature Communications - [London]: Nature Publishing Group UK, Vol. 8.2017, 1, Art. 14870, insgesamt 7 S.; http://dx.doi.org/10.1038/ncomms14870

Neugebauer, S.;  Hoffmann, M. P.;  Witte, Hartmut;  Bläsing, Jürgen;  Dadgar, Armin;  Strittmatter, André;  Niermann, T.;  Narodovitch, M.;  Lehmann, M. 

All metalorganic chemical vapor phase epitaxy of p/n-GaN tunnel junction for blue light emitting diode applications
In: Applied physics letters - Melville, NY: American Inst. of Physics, Vol. 110.2017, 10, Art. 102104, insgesamt 5 S.; http://dx.doi.org/10.1063/1.4978268

Poliani, Emanuele;  Wagner, Markus R.;  Vierck, Asmus;  Herziger, Felix;  Nenstiel, Christian;  Gannott, Florentina;  Schweiger, Manuel;  Fritze, Stephanie;  Dadgar, Armin;  Zaumseil, Jana;  Krost, Alois;  Hoffmann, Axel;  Maultzsch, Janina 

Breakdown of far-field raman selection rules by light-plasmon coupling demonstrated by tip-enhanced raman scattering
In: The journal of physical chemistry letters - Washington, DC: ACS, Bd. 8.2017, 22, S. 5462-5471; http://dx.doi.org/10.1021/acs.jpclett.7b02505

Fischbach, Sarah;  Kaganskiy, Arsenty;  Tauscher, Esra Burcu Yarar;  Gericke, Fabian;  Thoma, Alexander;  Schmidt, Ronny;  Strittmatter, André;  Heindel, Tobias;  Rodt, Sven;  Reitzenstein, S. 

Efficient single-photon source based on a deterministically fabricated single quantum dot - microstructure with backside gold mirror
In: Applied physics letters - Melville, NY: American Inst. of Physics, Vol. 110.2017, 1, Art. 011106, insgesamt 5 S.; http://dx.doi.org/10.1063/1.4991389

Zhang, Yuhao;  Piedra, Daniel;  Sun, Min;  Hennig, Jonas;  Dadgar, Armin;  Yu, Lili;  Palacios, Tomás 

High-performance 500 V quasi- and fully-vertical GaN-on-Si pn diodes
In: IEEE electron device letters: a publication of the IEEE Electron Devices Society - New York, NY: IEEE, Bd. 38.2017, 2, S. 248-251; http://dx.doi.org/10.1109/LED.2016.2646669

Fariza, A.;  Lesnik, A.;  Neugebauer, S.;  Wieneke, Matthias;  Hennig, J.;  Bläsing, Jürgen;  Witte, Hartmut;  Dadgar, Armin;  Strittmatter, André 

Leakage currents and fermi-level shifts in GaN layers upon iron and carbon-doping
In: Journal of applied physics: AIP\'s archival journal for significant new results in applied physics - Melville, NY: American Inst. of Physics, Vol. 122.2017, 2, Art. 025704, insgesamt 7 S.; http://dx.doi.org/10.1063/1.4993180

Holý, V.;  Kriegner, D.;  Lesnik, A.;  Bläsing, Jürgen;  Wieneke, M.;  Dadgar, Armin;  Harcuba, P. 

Observation of individual stacking faults in GaN microcrystals by x-ray nanodiffraction
In: Applied physics letters - Melville, NY: American Inst. of Physics, Vol. 110.2017, 12, Art. 121905, insgesamt 5 S.; http://dx.doi.org/10.1063/1.4978870

Maryński, A.;  Mrowiński, P.;  Ryczko, K.;  Podemski, P.;  Gawarecki, K.;  Musiał, A.;  Misiewicz, J.;  Quandt, D.;  Strittmatter, André;  Rodt, S.;  Reitzenstein, S.;  Sęk, G. 

Optimizing the InGaAs/GaAs quantum dots for 1.3 m emission
In: Acta physica Polonica / A - Warsaw: Acad. Inst, Bd. 132.2017, 2, S. 386-389; http://dx.doi.org/10.12693/aphyspola.132.386

Bounouar, Samir;  Strauß, Max;  Carmele, Alexander;  Schnauber, Peter;  Thoma, Alexander;  Gschrey, Manuel;  Schulze, Hans-Peter;  Strittmatter, André;  Rodt, Sven;  Knorr, Andreas;  Reitzenstein, Stephan 

Path-controlled time reordering of paired photons in a dressed three-level cascade
In: Physical review letters - College Park, Md: APS, Vol. 118.2017, 23, Artikel 233601; http://dx.doi.org/10.1103/PhysRevLett.118.233601

Lesnik, Andreas;  Hoffmann, Marc P.;  Fariza, Aqdas;  Bläsing, Jürgen;  Witte, Hartmut;  Veit, Peter;  Hörich, Florian;  Berger, Christoph;  Hennig, Jonas;  Dadgar, Armin;  Strittmatter, André 

Properties of C-doped GaN
In: Physica status solidi / B - Weinheim: Wiley-VCH, Vol. 254.2017, 8, Art. 1600708, insgesamt 7 S.; http://dx.doi.org/10.1002/pssb.201600708

Prozheeva, V.;  Makkonen, I.;  Cuscó, R.;  Artús, L.;  Dadgar, Armin;  Plazaola, F.;  Tuomisto, F. 

Radiation-induced alloy rearrangement in InxGa1 xN
In: Applied physics letters - Melville, NY: American Inst. of Physics, Vol. 110.2017, 13, Art. 132104, insgesamt 5 S.; http://dx.doi.org/10.1063/1.4979410

Zhang, Yuhao;  Sun, Min;  Piedra, Daniel;  Hennig, Jonas;  Dadgar, Armin;  Palacios, Tomás 

Reduction of on-resistance and current crowding in quasi-vertical GaN power diodes
In: Applied physics letters - Melville, NY: American Inst. of Physics, Vol. 111.2017, 16, Art. 163506, insgesamt 5 S.; http://dx.doi.org/10.1063/1.4989599

Strauß, Max;  Kaganskiy, Arsenty;  Voigt, Robert;  Schnauber, Peter;  Schulze, Jan-Hendrik;  Rodt, Sven;  Strittmatter, André;  Reitzenstein, Stephan 

Resonance fluorescence of a site-controlled quantum dot realized by the buried-stressor growth technique
In: Applied physics letters - Melville, NY: American Inst. of Physics, Vol. 110.2017, 11, Art. 111101, insgesamt 5 S.; http://dx.doi.org/10.1063/1.4978428

Fischbach, Sarah;  Schlehahn, Alexander;  Thoma, Alexander;  Srocka, Nicole;  Gissibl, Timo;  Ristok, Simon;  Thiele, Simon;  Kaganskiy, Arsenty;  Strittmatter, André;  Heindel, Tobias;  Rodt, Sven;  Herkommer, Alois;  Giessen, Harald;  Reitzenstein, Stephan 

Single quantum dot with microlens and 3D-printed micro-objective as integrated bright single-photon source
In: ACS photonics - Washington, DC: ACS, Bd. 4.2017, 6, S. 1327-1332; http://dx.doi.org/10.1021/acsphotonics.7b00253

Thoma, A.;  Schnauber, P.;  Böhm, J.;  Gschrey, M.;  Schulze, J.-H.;  Strittmatter, André;  Rodt, S.;  Heindel, T.;  Reitzenstein, S. 

Two-photon interference from remote deterministic quantum dot microlenses
In: Applied physics letters - Melville, NY: American Inst. of Physics, Vol. 110.2017, 1, Art. 011104; http://dx.doi.org/10.1063/1.4973504

Dissertation

Berger, Christoph;  Strittmatter, André [AkademischeR BetreuerIn] 

Metallorganische Gasphasenepitaxie von nitridischen Mikrokavitäten für vertikal emittierende Laser und Einzelphotonenemitter
In: Magdeburg, 2017, x, 149 Seiten, Illustrationen, Diagramme, 30 cm ; [Literaturverzeichnis: Seite 127-144]

2016

Begutachteter Zeitschriftenartikel

Schmidt, Gordon;  Veit, Peter;  Berger, Christoph;  Bertram, Frank;  Dadgar, Armin;  Strittmatter, André;  Christen, Jürgen 

Clustered quantum dots in single GaN islands formed at threading dislocations
In: Japanese journal of applied physics: JJAP - Bristol: IOP Publ, Vol. 55.2016, 5S, Art. 05FF04, insgesamt 5 S.; http://dx.doi.org/10.7567/JJAP.55.05FF04

Kantner, M.;  Bandelow, U.;  Koprucki, T.;  Schulze, J.-H.;  Strittmatter, A.;  Wunsche, H.-J. 

Efficient current injection into single quantum dots through oxide-confined p-n-diodes
In: IEEE Transactions on Electron Devices, Vol. 63, 2016, Issue 5, S. 2036-2042, 10.1109/TED.2016.2538561

Thoma, A.;  Schnauber, P.;  Gschrey, M.;  Seifried, M.;  Wolters, J.;  Schulze, J.-H.;  Strittmatter, A.;  Rodt, S.;  Carmele, A.;  Knorr, A.;  Heindel, T.;  Reitzenstein, S. 

Exploring Dephasing of a Solid-State Quantum Emitter via Time- and Temperature-Dependent Hong-Ou-Mandel Experiments
In: Physical Review Letters, Vol. 116, 2016, Issue 3, 10.1103/PhysRevLett.116.033601

Schlehahn, A.;  Schmidt, R.;  Hopfmann, C.;  Schulze, J.-H.;  Strittmatter, André;  Heindel, T.;  Gantz, L.;  Schmidgall, E. R.;  Gershoni, D.;  Reitzenstein, S. 

Generating single photons at gigahertz modulation-speed using electrically controlled quantum dot microlenses
In: Applied physics letters - Melville, NY: American Inst. of Physics, Vol. 108.2016, 2, Art. 021104, insgesamt 6 S.; http://dx.doi.org/10.1063/1.4939658

Sala, E.M.;  Stracke, G.;  Selve, S.;  Niermann, T.;  Lehmann, M.;  Schlichting, S.;  Nippert, F.;  Callsen, G.;  Strittmatter, A.;  Bimberg, D. 

Growth and structure of In<inf>0.5</inf>Ga<inf>0.5</inf>Sb quantum dots on GaP(001)
In: Applied Physics Letters, Vol. 109, 2016, Issue 10, 10.1063/1.4962273

Harrison, S.;  Young, M.P.;  Hodgson, P.D.;  Young, R.J.;  Hayne, M.;  Danos, L.;  Schliwa, A.;  Strittmatter, A.;  Lenz, A.;  Eisele, H.;  Pohl, U.W.;  Bimberg, D. 

Heterodimensional charge-carrier confinement in stacked submonolayer InAs in GaAs
In: Physical Review B - Condensed Matter and Materials Physics, Vol. 93, 2016, Issue 8, 10.1103/PhysRevB.93.085302

Jakubczyk, T.;  Delmonte, V.;  Fischbach, S.;  Wigger, D.;  Reiter, D.E.;  Mermillod, Q.;  Schnauber, P.;  Kaganskiy, A.;  Schulze, J.-H.;  Strittmatter, A.;  Rodt, S.;  Langbein, W.;  Kuhn, T.;  Reitzenstein, S.;  Kasprzak, J. 

Impact of Phonons on Dephasing of Individual Excitons in Deterministic Quantum Dot Microlenses
In: ACS Photonics, Vol. 3, 2016, Issue 12, S. 2461-2466, 10.1021/acsphotonics.6b00707

Yaccuzzi, E.;  Khachadorian, S.;  Suárez, S.;  Reinoso, M.;  Goñi, A. R.;  Strittmatter, André;  Hoffmann, A.;  Giudici, P. 

Investigation of proton damage in III-V semiconductors by optical spectroscopy
In: Journal of applied physics: AIP\'s archival journal for significant new results in applied physics - Melville, NY: American Inst. of Physics, Vol. 119.2016, 23, Art. 235702; http://dx.doi.org/10.1063/1.4953585

Yaccuzzi, E.;  Khachadorian, S.;  Suárez, S.;  Reinoso, M.;  Goñi, A.R.;  Strittmatter, A.;  Hoffmann, A.;  Giudici, P. 

Investigation of proton damage in III-V semiconductors by optical spectroscopy
In: Journal of Applied Physics, Vol. 119, 2016, Issue 23, 10.1063/1.4953585

Berger, Christoph;  Lesnik, Andreas;  Zettler, Thomas;  Schmidt, Gordon;  Veit, Peter;  Dadgar, Armin;  Bläsing, Jürgen;  Christen, Jürgen;  Strittmatter, André 

Metalorganic chemical vapor phase epitaxy of narrow-band distributed Bragg reflectors realized by GaN:Ge modulation doping
In: Journal of crystal growth - Amsterdam [u.a.]: Elsevier, Bd. 440.2016, S. 6-12; http://dx.doi.org/10.1016/j.jcrysgro.2016.01.027

Schmidt, Gordon;  Veit, Peter;  Wieneke, Matthias;  Bertram, Frank;  Dadgar, Armin;  Krost, Alois;  Christen, Jürgen 

Nanoscale cathodoluminescence of stacking faults and partial dislocations in a-plane GaN
In: Physica status solidi / B. - Weinheim : Wiley-VCH, Bd. 253.2016, 1, S. 73-77

Publikationslink

Fariza, Aqdas;  Lesnik, Andreas;  Bläsing, Jürgen;  Hoffmann, Marc P.;  Hörich, Florian;  Veit, Peter;  Witte, Hartmut;  Dadgar, Armin;  Strittmatter, André 

On reduction of current leakage in GaN by carbon-doping
In: Applied physics letters - Melville, NY: American Inst. of Physics, Vol. 109.2016, 21, Art. 212102, insgesamt 5 S.; http://dx.doi.org/10.1063/1.4968823

Neugebauer, Silvio;  Metzner, Sebastian;  Bläsing, Jürgen;  Bertram, Frank;  Dadgar, Armin;  Christen, Jürgen;  Strittmatter, André 

Polarization engineering of c-plane InGaN quantum wells by pulsed-flow growth of AlInGaN barriers
In: Physica status solidi / B - Weinheim: Wiley-VCH, Bd. 253.2016, 1, S. 118-125; http://dx.doi.org/10.1002/pssb.201552448

Lesnik, Andreas;  Hoffmann, Marc P.;  Fariza, Aqdas;  Bläsing, Jürgen;  Witte, Hartmut;  Veit, Peter;  Hörich, Florian;  Berger, Christoph;  Hennig, Jonas;  Dadgar, Armin;  Strittmatter, André 

Properties of C-doped GaN
In: Physica status solidi / B - Weinheim: Wiley-VCH, insges. 7 S., 2016; http://dx.doi.org/10.1002/pssb.201600708

Herzog, B.;  Lingnau, B.;  Kolarczik, M.;  Kaptan, Y.;  Bimberg, D.;  Maaßdorf, A.;  Pohl, U.W.;  Rosales, R.;  Schulze, J.-H.;  Strittmatter, A.;  Weyers, M.;  Woggon, U.;  Lüdge, K.;  Owschimikow, N. 

Strong amplitude-phase coupling in submonolayer quantum dots
In: Applied Physics Letters, Vol. 109, 2016, Issue 20, 10.1063/1.4967833

Contreras, O.;  Ruiz-Zepeda, F.;  Avalos-Borja, M.;  Dadgar, Armin;  Krost, Alois 

Termination of hollow core nanopipes in GaN by an AlN interlayer
In: Journal of crystal growth. - Amsterdam [u.a.] : Elsevier, Bd. 455.2016, S. 43-48

Publikationslink

Freytag, Stefan;  Feneberg, Martin;  Berger, Christoph;  Bläsing, Jürgen;  Dadgar, Armin;  Callsen, Gordon;  Hoffmann, Axel;  Bokov, Pavel;  Goldhahn, Rüdiger 

Unintentional indium incorporation into barriers of InGaN/GaN multiple quantum wells studied by photoreflectance and photoluminescence excitation spectroscopy
In: Journal of applied physics : AIP\'s archival journal for significant new results in applied physics. - Melville, NY : American Inst. of Physics; Vol. 120.2016, 1, Art. 015703

Publikationslink

Buchbeitrag

Kantner, M.;  Bandelow, U.;  Koprucki, T.;  Schulze, J.-H.;  Strittmatter, A.;  Wunsche, H.-J. 

On current injection into single quantum dots through oxide-confined pn-diodes
In: 16th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2016, 2016, S. 215-216, 10.1109/NUSOD.2016.7547002

2015

Begutachteter Zeitschriftenartikel

Bonato, L.;  Sala, E.M.;  Stracke, G.;  Nowozin, T.;  Strittmatter, A.;  Ajour, M.N.;  Daqrouq, K.;  Bimberg, D. 

230 s room-temperature storage time and 1.14 eV hole localization energy in In<inf>0.5</inf>Ga<inf>0.5</inf>As quantum dots on a GaAs interlayer in GaP with an AlP barrier
In: Applied Physics Letters, Vol. 106, 2015, Issue 4, 10.1063/1.4906994

Kaganskiy, Arsenty;  Gschrey, Manuel;  Schlehahn, Alexander;  Schmidt, Ronny;  Schulze, Jan-Hindrik;  Heindel, Tobias;  Strittmatter, André;  Rodt, Sven;  Reitzenstein, Stephan 

Advanced in-situ electron-beam lithography for deterministic nanophotonic device processing
In: Review of scientific instruments: a monthly journal devoted to scientific instruments, apparatus, and techniques - [S.l.]: American Institute of Physics, Vol. 86.2015, 7, Art. 073903, insgesamt 6 S.; http://dx.doi.org/10.1063/1.4926995

Bellmann, K.;  Tabataba-Vakili, F.;  Wernicke, T.;  Strittmatter, A.;  Callsen, G.;  Hoffmann, A.;  Kneissl, M. 

Desorption induced GaN quantum dots on (0001) AlN by MOVPE
In: Physica Status Solidi - Rapid Research Letters, Vol. 9, 2015, Issue 9, S. 526-529, 10.1002/pssr.201510217

Schmidt, Gordon;  Berger, Christoph;  Veit, Peter;  Metzner, Sebastian;  Bertram, Frank;  Bläsing, Jürgen;  Dadgar, Armin;  Strittmatter, André;  Christen, Jürgen;  Callsen, Gordon;  Kalinowski, Stefan;  Hoffmann, Axel 

Direct evidence of single quantum dot emission from GaN islands formed at threading dislocations using nanoscale cathodoluminescence - a source of single photons in the ultraviolet
In: Applied physics letters - Melville, NY: American Inst. of Physics, Vol. 106.2015, 25, Art. 252101, insgesamt 5 S.; http://dx.doi.org/10.1063/1.4922919

Hennig, Jonas;  Dadgar, Armin;  Witte, Hartmut;  Bläsing, Jürgen;  Lesnik, Andreas;  Strittmatter, André;  Krost, Alois 

Enhanced sheet carrier densities in polarization controlled AlInN/AlN/GaN/InGaN field-effect transistor on Si (111)
In: AIP Advances - New York, NY: American Inst. of Physics, Vol. 5.2015, 7, Art. 077146, insgesamt 8 S.; http://dx.doi.org/10.1063/1.4927402

Hennig, Jonas;  Dadgar, Armin;  Witte, Hartmut;  Bläsing, Jürgen;  Lesnik, Andreas;  Strittmatter, André;  Krost, Alois 

Enhanced sheet carrier densities in polarization controlled AlInN/AlN/GaN/InGaN field-effect transistor on Si (111)
In: AIP Advances. - New York, NY : American Inst. of Physics; Vol. 5.2015, 7, Art. 077146, insgesamt 9 S.

Publikationslink

Herzog, B.;  Owschimikow, N.;  Schulze, J.-H.;  Rosales, R.;  Kaptan, Y.;  Kolarczik, M.;  Switaiski, T.;  Strittmatter, A.;  Bimberg, D.;  Pohl, U.W.;  Woggon, U. 

Fast gain and phase recovery of semiconductor optical amplifiers based on submonolayer quantum dots
In: Applied Physics Letters, Vol. 107, 2015, Issue 20, 10.1063/1.4935792

Nenstiel, C.;  Bügler, M.;  Callsen, G.;  Nippert, F.;  Kure, T.;  Fritze, S.;  Dadgar, Armin;  Witte, Hartmut;  Bläsing, Jürgen;  Krost, A.;  Hoffmann, A. 

Germanium - the superior dopant in n-type GaN
In: Physica status solidi / Rapid research letters. - Weinheim : Wiley-VCH, Bd. 9.2015, 12, S. 716-721

Publikationslink

Berger, Christoph;  Dadgar, Armin;  Bläsing, Jürgen;  Lesnik, Andreas;  Veit, Peter;  Schmidt, Gordon;  Hempel, Thomas;  Christen, Jürgen;  Krost, Alois;  Strittmatter, André 

Growth of AlInN/GaN distributed Bragg reflectors with improved interface quality
In: Journal of crystal growth - Amsterdam [u.a.]: Elsevier, Bd. 414.2015, S. 105-109; http://dx.doi.org/10.1016/j.jcrysgro.2014.09.008

Gschrey, M.;  Thoma, A.;  Schnauber, P.;  Seifried, M.;  Schmidt, R.;  Wohlfeil, B.;  Krüger, L.;  Schulze, J.-H.;  Heindel, T.;  Burger, S.;  Schmidt, F.;  Strittmatter, A.;  Rodt, S.;  Reitzenstein, S. 

Highly indistinguishable photons from deterministic quantum-dot microlenses utilizing three-dimensional in situ electron-beam lithography
In: Nature Communications, Vol. 6, 2015, 10.1038/ncomms8662

Schlehahn, A.;  Krüger, L.;  Gschrey, M.;  Schulze, J.-H.;  Rodt, S.;  Strittmatter, André;  Heindel, T.;  Reitzenstein, S. 

Operating single quantum emitters with a compact Stirling cryocooler
In: Review of scientific instruments: a monthly journal devoted to scientific instruments, apparatus, and techniques - [S.l.]: American Institute of Physics, Vol. 86.2015, 1, Art. 013113, insgesamt 7 S.; http://dx.doi.org/10.1063/1.4906548

Gschrey, M.;  Schmidt, R.;  Schulze, J.-H.;  Strittmatter, A.;  Rodt, S.;  Reitzenstein, S. 

Resolution and alignment accuracy of low-temperature in situ electron beam lithography for nanophotonic device fabrication
In: Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics, Vol. 33, 2015, Issue 2, 10.1116/1.4914914

Schlehahn, A.;  Gaafar, M.;  Vaupel, M.;  Gschrey, M.;  Schnauber, P.;  Schulze, J.-H.;  Rodt, S.;  Strittmatter, André;  Stolz, W.;  Rahimi-Iman, A.;  Heindel, T.;  Koch, M.;  Reitzenstein, S. 

Single-photon emission at a rate of 14MHz from a deterministic quantum-dot microlens triggered by a mode-locked vertical-external-cavity surface-emitting laser
In: Applied physics letters - Melville, NY: American Inst. of Physics, Vol. 107.2015, 4, Art. 041105, insgesamt 5 S.; http://dx.doi.org/10.1063/1.4927429

Dadgar, Armin 

Sixteen years GaN on Si
In: Physica status solidi / B. - Weinheim : Wiley-VCH, Bd. 252.2015, 5, S. 1063-1068

Publikationslink

Kießling, F.;  Niermann, T.;  Lehmann, M.;  Schulze, J.-H.;  Strittmatter, A.;  Schliwa, A.;  Pohl, U.W. 

Strain field of a buried oxide aperture
In: Physical Review B - Condensed Matter and Materials Physics, Vol. 91, 2015, Issue 7, 10.1103/PhysRevB.91.075306

Quandt, D.;  Schulze, J.-H.;  Schliwa, A.;  Diemer, Z.;  Prohl, C.;  Lenz, A.;  Eisele, H.;  Strittmatter, A.;  Pohl, U.W.;  Gschrey, M.;  Rodt, S.;  Reitzenstein, S.;  Bimberg, D.;  Lehmann, M.;  Weyland, M. 

Strong charge-carrier localization in InAs/GaAs submonolayer stacks prepared by Sb-assisted metalorganic vapor-phase epitaxy
In: Physical Review B - Condensed Matter and Materials Physics, Vol. 91, 2015, Issue 23, 10.1103/PhysRevB.91.235418

Buchbeitrag

Volz, Kerstin;  Stolz, Wolfgang;  Dadgar, Armin;  Krost, Alois 

Growth of III/Vs on silicon - nitrides, phosphides, arsenides and antimonides
In: Handbook of crystal growth ; Vol. 3, Pt. B: Materials, processes, and technology. - Amsterdam [u.a.] : Elsevier, 2015

Thoma, A.;  Schnauber, P.;  Gschrey, M.;  Schmidt, R.;  Wohlfeil, B.;  Seifried, M.;  Schulze, J.-H.;  Burger, S.;  Schmidt, F.;  Strittmatter, A.;  Rodt, S.;  Heindel, T.;  Reitzenstein, S. 

Indistinguishable photons from deterministically fabricated quantum dot microlenses
In: Integrated Photonics Research, Silicon and Nanophotonics, IPRSN 2015, 2015, S. 371p

2014

Begutachteter Zeitschriftenartikel

Stubenrauch, M.;  Stracke, G.;  ArsenijeviĿ, D.;  Strittmatter, A.;  Bimberg, D. 

15 Gb/s index-coupled distributed-feedback lasers based on 1.3 μ m InGaAs quantum dots
In: Applied Physics Letters, Vol. 105, 2014, Issue 1, 10.1063/1.4887063

Feneberg, Martin;  Osterburg, Sarah;  Lange, Karsten;  Lidig, Christian;  Garke, Bernd;  Goldhahn, Rüdiger;  Richter, Eberhard;  Netzel, Carsten;  Neumann, Maciej D.;  Esser, Norbert;  Fritze, Stephanie;  Witte, Hartmut;  Bläsing, Jürgen;  Dadgar, Armin;  Krost, Alois 

Band gap renormalization and Burstein-Moss effect in silicon- and germanium-doped wurtzite GaN up to 1020 cm-3
In: Physical review. - College Park, Md : APSPhysical review / B; Vol. 90.2014, 7, Art. 075203, insgesamt 10 S.

Publikationslink

Lesnik, Andreas;  Bläsing, Jürgen;  Hennig, Jonas;  Dadgar, Armin;  Krost, Alois 

Characterization of AlInN/AlN/GaN FET structures using x-ray diffraction, x-ray reflectometry and grazing incidence x-ray fluorescence analysis
In: Journal of physics. - Bristol : IOP PublJournal of physics / D; Vol. 47.2014, 35, Art. 355106, insgesamt 6 S.

Publikationslink

Berger, C.;  Dadgar, A.;  Bläsing, J.;  Lesnik, A.;  Veit, P.;  Schmidt, G.;  Hempel, T.;  Christen, J.;  Krost, A.;  Strittmatter, A. 

Growth of AlInN/GaN distributed Bragg reflectors with improved interface quality
In: Journal of Crystal Growth, 2014, S. , ISSN 00220248, 10.1016/j.jcrysgro.2014.09.008

Witte, Hartmut;  Lippelt, Thomas;  Warnke, Christian;  Dadgar, Armin;  Hauser, Marcus J. B.;  Krost, Alois 

High-frequency detection of cell activity of Physarum polycephalum by a planar open gate AlGaN/GaN HEMT
In: Journal of physics. - Bristol : IOP PublJournal of physics / D; Vol. 47.2014, 42, Art. 425401, insgesamt 10 S.

Publikationslink

Oliva, R.;  Ibáñez, J.;  Cuscó, R.;  Dadgar, Armin;  Krost, Alois;  Gandhi, J.;  Bensaoula, A.;  Artús, L. 

High-pressure Raman scattering in InGaN heteroepitaxial layers - effect of the substrate on the phonon pressure coefficients
In: Applied physics letters. - Melville, NY : American Inst. of Physics; Bd. 104.2014, 14, Art. 142101, insgesamt 5 S.

Publikationslink

Stracke, G.;  Sala, E.M.;  Selve, S.;  Niermann, T.;  Schliwa, A.;  Strittmatter, A.;  Bimberg, D. 

Indirect and direct optical transitions in In0.5Ga 0.5As/GaP quantum dots
In: Applied Physics Letters, Vol. 104, 2014, Issue 12, 10.1063/1.4870087

Schulz, Oliver;  Dadgar, Armin;  Hennig, Jonas;  Krumm, Oliver;  Fritze, Stephanie;  Bläsing, Jürgen;  Witte, Hartmut;  Diez, Annette;  Krost, Alois 

Wafer curvature, temperature inhomogeneity, plastic deformation and their impact on the properties of GaN on silicon power and opto-electronic structures
In: Physica status solidi. - Berlin : Wiley-VCHPhysica status solidi / C, Bd. 11.2014, 3/4, S. 397-400

Publikationslink

Buchbeitrag

Gschrey, M.;  Seifried, M.;  Krüger, L.;  Schmidt, R.;  Schulze, J.-H.;  Heindel, T.;  Burger, S.;  Rodt, S.;  Schmidt, F.;  Strittmatter, A.;  Reitzenstein, S. 

Advanced quantum light sources: Modelling and realization by deterministic nanofabrication technologies
In: Optics InfoBase Conference Papers, 2014

Gschrey, M.;  Seifried, M.;  Krüger, L.;  Schmidt, R.;  Schulze, J.-H.;  Heindel, T.;  Burger, S.;  Rodt, S.;  Schmidt, F.;  Strittmatter, A.;  Reitzenstein, S. 

Boosting the photon-extraction efficiency of nanophotonic structures by deterministic microlenses
In: Conference on Lasers and Electro-Optics Europe - Technical Digest, Vol. 2014-January, 2014

Gschrey, M.;  Seifried, M.;  Krüger, L.;  Schmidt, R.;  Schulze, J.-H.;  Heinde, T.;  Burger, S.;  Rodt, S.;  Schmidt, F.;  Strittmatter, A.;  Reitzenstein, S. 

Boosting the photon-extraction efficiency of nanophotonic structures by deterministic microlenses
In: Optics InfoBase Conference Papers, 2014

Gschrey, M.;  Gericke, F.;  Schmidt, R.;  Schlottmann, E.;  Schüssler, A.;  Schulze, J.-H.;  Heindel, T.;  Rodt, S.;  Strittmatter, A.;  Reitzenstein, S. 

Fabrication of deterministic quantum light sources using cathodoluminescence lithography
In: Optics InfoBase Conference Papers, 2014

Stubenrauch, M.;  Stracke, G.;  ArsenijeviĿ, D.;  Strittmatter, A.;  Bimberg, D. 

Index-coupled quantum-dot distributed-feedback lasers
In: 2014 IEEE Photonics Conference, IPC 2014, 2014, S. 240-241, 10.1109/IPCon.2014.6995337

Thoma, A.;  Schnauber, P.;  Gschrey, M.;  Schmidt, R.;  Wohlfeil, B.;  Seifried, M.;  Schulze, J.-H.;  Burger, S.;  Schmidt, F.;  Strittmatter, A.;  Rodt, S.;  Heindel, T.;  Reitzenstein, S. 

Indistinguishable photons from deterministic quantum dot microlenses
In: Optics InfoBase Conference Papers, Vol. Part F3-EQEC 2015, 2014

2013

Begutachteter Zeitschriftenartikel

Dadgar, Armin;  Fritze, Stephanie;  Schulze, Oliver;  Hennig, Jonas;  Bläsing, Jürgen;  Witte, Hartmut;  Diez, Annette;  Heinle, U.;  Kunze, M.;  Daumiller, I.;  Haberland, K.;  Krost, Alois 

Anisotropic bow and plastic deformation of GaN on silicon
In: Journal of crystal growth. - Amsterdam [u.a.] : Elsevier, Bd. 370.2013, S. 278-281

Publikationslink

Feneberg, Martin;  Lange, Karsten;  Lidig, Christian;  Wieneke, Matthias;  Witte, Hartmut;  Bläsing, Jürgen;  Dadgar, Armin;  Krost, Alois;  Goldhahn, Rüdiger 

Anisotropy of effective electron masses in highly doped nonpolar GaN
In: Applied physics letters. - Melville, NY : American Inst. of Physics; Vol. 103.2013, 23, Art. 232104, insgesamt 5 S.

Publikationslink

Switaiski, T.;  Woggon, U.;  Alden Angeles, D.E.;  Hoffmann, A.;  Schulze, J.-H.;  Germann, T.D.;  Strittmatter, A.;  Pohl, U.W. 

Carrier dynamics in InAs/GaAs submonolayer stacks coupled to Stranski-Krastanov quantum dots
In: Physical Review B - Condensed Matter and Materials Physics, Vol. 88, 2013, Issue 3, 10.1103/PhysRevB.88.035314

Wieneke, Matthias;  Witte, Hartmut;  Lange, Karsten;  Feneberg, Martin;  Dadgar, Armin;  Bläsing, Jürgen;  Goldhahn, Rüdiger;  Krost, Alois 

Ge as a surfactant in metal-organic vapor phase epitaxy growth of a-plane GaN exceeding carrier concentrations of 10 20 cm -3
In: Applied physics letters. - Melville, NY : American Inst. of Physics; Vol. 103.2013, Art. 012103, insgesamt 4 S.

Publikationslink

Dadgar, Armin;  Groh, Lars;  Metzner, Sebastian;  Neugebauer, Silvio;  Bläsing, Jürgen;  Hempel, Thomas;  Bertram, Frank 

Green to blue polarization compensated c-axis oriented multi-quantum wells by AlGaInN barrier layers
In: Applied physics letters. - Melville, NY : American Inst. of Physics; Vol. 102.2013, 6, Art. 062110, insgesamt 4 S.

Publikationslink

Bläsing, Jürgen;  Holý, Vaclav;  Dadgar, Armin;  Veit, Peter;  Christen, Jürgen;  Ploch, Simon;  Frentrup, Martin;  Wernicke, Tim;  Kneissl, Michael;  Krost, Alois 

Growth and characterization of stacking fault reduced GaN(101̄3) on sapphire
In: Journal of physics. - Bristol : IOP PublJournal of physics / D, Bd. 46.2013, 12, insges. 4 S.

Publikationslink

Gschrey, M.;  Gericke, F.;  Schüßler, A.;  Schmidt, R.;  Schulze, J.-H.;  Heindel, T.;  Rodt, S.;  Strittmatter, A.;  Reitzenstein, S. 

In situ electron-beam lithography of deterministic single-quantum-dot mesa-structures using low-temperature cathodoluminescence spectroscopy
In: Applied Physics Letters, Vol. 102, 2013, Issue 25, 10.1063/1.4812343

Berger, Christoph;  Dadgar, Armin;  Bläsing, Jürgen;  Krost, Alois 

In-situ growth monitoring of AlInN/AlGaN distributed Bragg reflectors for the UV-spectral range
In: Journal of crystal growth. - Amsterdam [u.a.] : Elsevier, Bd. 370.2013, S. 87-91

Publikationslink

Ravash, Roghaiyeh;  Dadgar, Armin;  Bertram, Frank;  Dempewolf, Anja;  Metzner, Sebastian;  Hempel, Thomas;  Christen, Jürgen;  Krost, Alois 

MOVPE growth of semi-polar GaN light-emitting diode structures on planar Si(112) and Si(113) substrates
In: Journal of crystal growth. - Amsterdam [u.a.] : Elsevier, Bd. 370.2013, S. 288-292

Publikationslink

Prohl, C.;  Lenz, A.;  Roy, D.;  Schuppang, J.;  Stracke, G.;  Strittmatter, A.;  Pohl, U.W.;  Bimberg, D.;  Eisele, H.;  Dähne, M. 

Spatial structure of In<inf>0.25</inf>Ga<inf>0.75</inf>As/GaAs/GaP quantum dots on the atomic scale
In: Applied Physics Letters, Vol. 102, 2013, Issue 12, 10.1063/1.4798520

Romero, María Fátima;  Feneberg, Martin;  Moser, Pascal;  Berger, Christoph;  Bläsing, Jürgen;  Dadgar, Armin;  Krost, Alois;  Sakalauskas, Egidijus;  Calle, Fernando;  Goldhahn, Rüdiger 

Systematic optical characterization of two-dimensional electron gases in InAlN/GaN-based heterostructures with different in content
In: Japanese journal of applied physics. - Tokyo : Inst. of Pure and Applied Physics; Vol. 52.2013, Art. 08jk02, insgesamt 4 S.

Publikationslink

Buchbeitrag

Dadgar, Armin;  Krost, Alois 

Epitaxial growth and benefits of GaN on silicon in III-nitride semiconductors and their modern devices
In: Gil, Bernard: : III-Nitride Semiconductors and their Modern Devices. - Oxford : Univ. Press, S. 78-120, 2013 - (Series on Semiconductor Science and Technology; 18)

Pohl, U.W.;  Strittmatter, A.;  Schulze, J.-H.;  Quandt, D.;  Germann, T.D.;  Unrau, W.;  Heindel, T.;  Hitzemann, O.;  Bimberg, D.;  Reitzenstein, S. 

Self-aligned quantum-dot growth for single-photon sources
In: Conference Proceedings - International Conference on Indium Phosphide and Related Materials, 2013, 10.1109/ICIPRM.2013.6562566

2012

Begutachteter Zeitschriftenartikel

Niermann, T.;  Kieling, F.;  Lehmann, M.;  Schulze, J.-H.;  Germann, T.D.;  Pötschke, K.;  Strittmatter, A.;  Pohl, U.W. 

Atomic structure of closely stacked InAs submonolayer depositions in GaAs
In: Journal of Applied Physics, Vol. 112, 2012, Issue 8, 10.1063/1.4758301

Unrau, W.;  Quandt, D.;  Schulze, J.-H.;  Heindel, T.;  Germann, T.D.;  Hitzemann, O.;  Strittmatter, A.;  Reitzenstein, S.;  Pohl, U.W.;  Bimberg, D. 

Electrically driven single photon source based on a site-controlled quantum dot with self-aligned current injection
In: Applied Physics Letters, Vol. 101, 2012, Issue 21, 10.1063/1.4767525

Germann, T.D.;  Hofmann, W.;  Nadtochiy, A.M.;  Schulze, J.-H.;  Mutig, A.;  Strittmatter, A.;  Bimberg, D. 

Electro-optical resonance modulation of vertical-cavity surface-emitting lasers
In: Optics Express, Vol. 20, 2012, Issue 5, S. 5099-5107, 10.1364/OE.20.005099

Stracke, G.;  Glacki, A.;  Nowozin, T.;  Bonato, L.;  Rodt, S.;  Prohl, C.;  Lenz, A.;  Eisele, H.;  Schliwa, A.;  Strittmatter, A.;  Pohl, U.W.;  Bimberg, D. 

Growth of In<inf>0.25</inf>Ga<inf>0.75</inf> As quantum dots on GaP utilizing a GaAs interlayer
In: Applied Physics Letters, Vol. 101, 2012, Issue 22, 10.1063/1.4768294

Posilovic, K.;  Kalosha, V.P.;  Winterfeldt, M.;  Schulze, J.-H.;  Quandt, D.;  Germann, T.D.;  Strittmatter, A.;  Bimberg, D.;  Pohl, J.;  Weyers, M. 

High-power low-divergence 1060nm photonic crystal laser diodes based on quantum dots
In: Electronics Letters, Vol. 48, 2012, Issue 22, S. 1419-1420, 10.1049/el.2012.3174

Strittmatter, A.;  Schliwa, A.;  Schulze, J.-H.;  Germann, T.D.;  Dreismann, A.;  Hitzemann, O.;  Stock, E.;  Ostapenko, I.A.;  Rodt, S.;  Unrau, W.;  Pohl, U.W.;  Hoffmann, A.;  Bimberg, D.;  Haisler, V. 

Lateral positioning of InGaAs quantum dots using a buried stressor
In: Applied Physics Letters, Vol. 100, 2012, Issue 9, 10.1063/1.3691251

Franke, Alexander;  Bastek, B.;  Sterling, Stefan;  August, Olga;  Petzold, Silke;  Veit, Peter;  Christen, Jürgen;  Moser, P.;  Wieneke, Matthias;  Berger, Christoph;  Bläsing, J.;  Dadgar, Armin;  Krost, Alois 

Optical characterization of a InGaN/GaN microcavity with epitaxial AlInN/GaN bottom DBR
In: MRS online proceedings library. - Warrendale, Pa : MRS, Bd. 1396.2012

Publikationslink

Strittmatter, A.;  Holzbecher, A.;  Schliwa, A.;  Schulze, J.-H.;  Quandt, D.;  Germann, T.D.;  Dreismann, A.;  Hitzemann, O.;  Stock, E.;  Ostapenko, I.A.;  Rodt, S.;  Unrau, W.;  Pohl, U.W.;  Hoffmann, A.;  Bimberg, D.;  Haisler, V. 

Site-controlled quantum dot growth on buried oxide stressor layers
In: Physica Status Solidi (A) Applications and Materials Science, Vol. 209, 2012, Issue 12, S. 2411-2420, 10.1002/pssa.201228407

Kordoš, P.;  Mikulics, M.;  Stoklas, R.;  Čičo, K.;  Dadgar, Armin,;  Grützmacher, D.;  Krost, Alois 

Thermally oxidized InAlN of different compositions for InAlN/GaN heterostructure field-effect transistors
In: Journal of electronic materials. - Warrendale, Pa : TMS, Bd. 41.2012, 11, S. 3013-3016

Publikationslink

Buchbeitrag

Strittmatter, A. 

Site-selective growth of single quantum dots
In: Physica Status Solidi (A) Applications and Materials Science, Vol. 209, 2012, Issue 12, S. 2378, 10.1002/pssa.201221943

Originalartikel in begutachteter internationaler Zeitschrift

Ravash, Roghaiyeh;  Veit, Peter;  Müller, Mathias;  Schmidt, Gordon;  Dempewolf, Anja;  Hempel, Thomas;  Bläsing, Jürgen;  Bertram, Frank;  Dadgar, Armin;  Christen, Jürgen;  Krost, Alois 

Growth and stacking fault reduction in semi-polar GaN films on planar Si(112) and Si(113)
In: Physica status solidi. - Berlin : Wiley-VCHPhysica status solidi / C, Bd. 9.2012, 3/4, S. 507-510

Publikationslink

Berger, Christoph;  Dadgar, Armin;  Bläsing, Jürgen;  Franke, Alexander;  Hempel, Thomas;  Goldhahn, Rüdiger;  Christen, Jürgen;  Krost, Alois 

Growth of AlInN/AlGaN distributed Bragg reflectors for high quality microcavities
In: Physica status solidi. - Berlin : Wiley-VCHPhysica status solidi / C, Bd. 9.2012, 5, S. 1253-1258

Publikationslink

S. Fritze;  Dadgar, Armin;  Witte, Hartmut;  Bügler, M.;  Rohrbeck, A.;  Bläsing, Jürgen;  Hoffmann, A.;  Krost, Alois 

High Si and Ge n-type doping of GaN doping - Limits and impact on stress
In: Applied physics letters. - Melville, NY : AIP, Bd. 100.2012, 12, insges. 4 S.

Publikationslink

Romero, Michael F.;  Feneberg, Martin;  Moser, Pascal;  Berger, C.;  Bläsing, Jürgen;  Dadgar, Armin;  Krost, Alois;  Sakalauskas, Egidijus;  Goldhahn, Rüdiger 

Luminescence from two-dimensional electron gases in InAlN/GaN heterostructures with different In content
In: Applied physics letters. - Melville, NY : AIP, Bd. 100.2012, 21, insges. 4 S.

Publikationslink

Romero, Maria Fatima;  Feneberg, Martin;  Moser, Pascal;  Berger, Christoph;  Bläsing, Jürgen;  Dadgar, Armin;  Krost, Alois;  Sakalauskas, E.;  Goldhahn, Rüdiger 

Luminescence from two-dimensional electron gases in InAlN/GaN heterostructures with different In content
In: Applied physics letters. - Melville, NY : AIP, Bd. 100.2012, 21, insges. 4 S.

Publikationslink

Sakalauskas, E.;  Wieneke, Matthias;  Dadgar, Armin;  Gobsch, G.;  Krost, Alois;  Goldhahn, Rüdiger 

Optical anisotropy of a-plane Al0.8In0.2N grown on an a-plane GaN pseudosubstrate
In: Physica status solidi. - Weinheim : Wiley-VCHPhysica status solidi / A, Bd. 209.2012, 1, S. 29-32

Publikationslink

Fritze, S.;  Drechsel, P.;  Stauss, P.;  Rode, P.;  Markurt, T.;  Schulz, T.;  Albrecht, M.;  Bläsing, Jürgen;  Dadgar, Armin;  Krost, Alois 

Role of low-temperature AlGaN interlayers in thick GaN on silicon by metalorganic vapor phase epitaxy
In: Journal of applied physics. - Melville, NY : AIP, Bd. 111.2012, 12, insges. 6 S.

Publikationslink

2011

Anderes Material

Wieneke, Matthias;  Noltemeyer, Martin;  Bastek, Barbara;  Rohrbeck, Antje;  Witte, Hartmut;  Veit, Peter;  Bläsing, Jürgen;  Dadgar, Armin;  Christen, Jürgen;  Krost, Alois 

Heavy Si doping - the key in heteroepitaxial growth of a-plane GaN without basal plane stacking faults?
In: Physica status solidi / B: pss - Berlin: Wiley-VCH, Bd. 248.2011, 3, S. 578-582; http://dx.doi.org/10.1002/pssb.201046372

Begutachteter Zeitschriftenartikel

Lenz, A.;  Eisele, H.;  Becker, J.;  Schulze, J.-H.;  Germann, T.D.;  Luckert, F.;  Pötschke, K.;  Lenz, E.;  Ivanova, L.;  Strittmatter, A.;  Bimberg, D.;  Pohl, U.W.;  Dähne, M. 

Atomic structure and optical properties of InAs submonolayer depositions in GaAs
In: Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics, Vol. 29, 2011, Issue 4, 10.1116/1.3602470

Strittmatter, A.;  Teepe, M.;  Knollenberg, C.;  Johnson, N.M. 

Coalescence during epitaxial lateral overgrowth of (Al,Ga)N(1 1 .2) layers
In: Journal of Crystal Growth, Vol. 314, 2011, Issue 1, S. 1-4, 10.1016/j.jcrysgro.2010.09.064

Wunderer, T.;  Northrup, J.E.;  Yang, Z.;  Teepe, M.;  Strittmatter, A.;  Johnson, N.M.;  Rotella, P.;  Wraback, M. 

In-well pumping of InGaN/GaN vertical-external-cavity surface-emitting lasers
In: Applied Physics Letters, Vol. 99, 2011, Issue 20, 10.1063/1.3663575

Strittmatter, A.;  Northrup, J.E.;  Johnson, N.M.;  Kisin, M.V.;  Spiberg, P.;  El-Ghoroury, H.;  Usikov, A.;  Syrkin, A. 

Semi-polar nitride surfaces and heterostructures
In: Physica Status Solidi (B) Basic Research, Vol. 248, 2011, Issue 3, S. 561-573, 10.1002/pssb.201046422

Buchbeitrag

{Armin Dadgar}, 

Device structures and properties: GaN Based Optical Devices on Silicon
In: 2011

{Armin Dadgar}, 

GaN and related alloys on silicon: growth and integration techniques: New technology approaches
In: 2011

Chua, C.;  Yang, Z.;  Knollenberg, C.;  Teepe, M.;  Cheng, B.;  Strittmatter, A.;  Bour, D.;  Johnson, N.M. 

InAlGaN optical emitters: Laser diodes with non-epitaxial cladding layers and ultraviolet light-emitting diodes
In: Proceedings of SPIE - The International Society for Optical Engineering, Vol. 7939, 2011, 10.1117/12.875188

Originalartikel in begutachteter internationaler Zeitschrift

Lin, Vivian Kaixin;  Dolmanan, Surani-bin;  Teo, Siew Lang;  Kim, Hui Hui;  Alarcon-Llado, Esther;  Dadgar, Armin;  Krost, Alois;  Tripathy, Sudhiranjan 

Al xGa1- xN/GaN heterostructures on a thin silicon-on-insulator substrate for metalsemiconductormetal photodetectors
In: Journal of physics / D - Bristol: IOP Publ, 44.2011, 36, Art. 365102, insgesamt 7 S.; http://dx.doi.org/10.1088/0022-3727/44/36/365102

Groh, Lars;  Hums, Christoph;  Bläsing, Jürgen;  Krost, Alois;  Dadgar, Armin 

Characterization of AlGaInN layers using X-ray diffraction and fluorescence
In: Physica status solidi / B: pss - Berlin: Wiley-VCH, Bd. 248.2011, 3, S. 622-626; http://dx.doi.org/10.1002/pssb.201046418

Dadgar, Armin;  Krost, Alois 

Comment on "the effects of Si doping on dislocation movement and tensile stress in GaN films"
In: Journal of applied physics - Melville, NY: AIP, 110.2011, 9, Art. 096110, insgesamt 2 S.; http://dx.doi.org/10.1063/1.3656430

Dadgar, Armin;  Bläsing, Jürgen;  Diez, Annette;  Krost, Alois 

Crack-free, highly conducting GaN layers on Si substrates by Ge doping
In: Applied physics express: APEX - Tokyo: IOP Publ, 4.2011, Art. 011001, insgesamt 3 S.; http://dx.doi.org/10.1143/APEX.4.011001

Witte, Hartmut;  Rohrbeck, A.;  Günther, K.-M.;  Saengkaew, P.;  Bläsing, Jürgen;  Dadgar, Armin;  Krost, Alois 

Electrical investigations of AlGaN/AlN structures for LEDs on Si(111)
In: Physica status solidi / A: pss - Berlin: Wiley-VCH, Bd. 208.2011, 7, S. 1597-1599; http://dx.doi.org/10.1002/pssa.201001146

Dadgar, Armin;  Ravash, Roghaiyeh;  Veit, Peter;  Schmidt, G.;  Müller, Mathias;  Dempewolf, Anja;  Bertram, Frank;  Wieneke, Matthias;  Christen, Jürgen;  Krost, Alois 

Eliminating stacking faults in semi-polar GaN by AlN interlayers
In: Applied physics letters - Melville, NY: AIP, 99.2011, 2, Art. 021905, insgesamt 3 S.; http://dx.doi.org/10.1063/1.3610467

Ravash, Roghaiyeh;  Bläsing, Jürgen;  Hempel, Thomas;  Noltemeyer, Martin;  Dadgar, Armin;  Christen, Jürgen;  Krost, Alois 

Impact of AlN seeding layer growth rate in MOVPE growth of semi-polar gallium nitride structures on high index silicon
In: Physica status solidi / B: pss - Berlin: Wiley-VCH, Bd. 248.2011, 3, S. 594-599; http://dx.doi.org/10.1002/pssb.201046313

Rossbach, Georg;  Feneberg, Martin;  Röppischer, Marcus;  Werner, Christoph;  Esser, Norbert;  Cobet, Christoph;  Meisch, Tobias;  Thonke, Klaus;  Dadgar, Armin;  Bläsing, Jürgen;  Krost, Alois;  Goldhahn, Rüdiger 

Influence of exciton-phonon coupling and strain on the anisotropic optical response of wurtzite AlN around the band edge
In: Physical review / B - Ridge, NY: APS, 83.2011, 19, Art. 195202, insgesamt 7 S.; http://dx.doi.org/10.1103/PhysRevB.83.195202

Sakalauskas, E.;  Wieneke, Matthias;  Dadgar, Armin;  Gobsch, G.;  Krost, Alois;  Goldhahn, Rüdiger 

Optical anisotropy of a-plane Al0.8In0.2N grown on an a-plane GaN pseudosubstrate
In: Physica status solidi / A - Weinheim: Wiley-VCH, insges. 4 S., 2011; http://dx.doi.org/10.1002/pssa.201100066

Franke, Alexander;  Bastek, B.;  Krimmling, J.;  Christen, Jürgen;  Moser, Pascal;  Dadgar, Armin;  Krost, Alois 

Optical investigation of a hybrid GaN based microcavity with AlInN/GaN bottom and dielectric top distributed Bragg mirror
In: Superlattices and microstructures: a journal devoted to the science and technology of synthetic microstructures, microdevices, surfaces and interfaces - Oxford [u.a.]: Elsevier Science, Academic Press, Bd. 49.2011, 3, S. 187-192; http://dx.doi.org/10.1016/j.spmi.2010.04.011 ; [Special issue: Proceedings of the 10th International Conference on the Physics of LightMatter Coupling in Nanostructures, PLMCN 2010 (Cuernavaca, Mexico), 12-16 April, 2010]

Krost, Alois;  Berger, C.;  Moser, Pascal;  Bläsing, Jürgen;  Dadgar, Armin;  Hums, C.;  Hempel, Thomas;  Bastek, Barbara;  Veit, Peter;  Christen, Jürgen 

StranskiKrastanov transition and self-organized structures in low-strained AlInN/GaN multilayer structures
In: Semiconductor science and technology - Bristol: IOP Publ., Bd. 26.2011, 1, insges. 8 S.; http://dx.doi.org/10.1088/0268-1242/26/1/014041

Moser, Pascal;  Bläsing, Jürgen;  Dadgar, Armin;  Hempel, Thomas;  Christen, Jürgen;  Krost, Alois 

Stress relaxation in low-strain AlInN/GaN bragg mirrors
In: Japanese journal of applied physics: JJAP - Tokyo: IOP Publ, 50.2011, 3, Art. 031002, insgesamt 6 S.; http://dx.doi.org/10.1143/JJAP.50.031002

Dolmanan, Surani Bin;  Teo, Siew Lang;  Lin, Vivian Kaixin;  Hui, Hui Kim;  Dadgar, Armin;  Krost, Alois;  Tripathy, Sudhiranjan 

Thin-film InGaN/GaN vertical light emitting diodes using GaN on silicon-on-insulator substrates
In: Electrochemical and solid-state letters: a joint publication of the Electrochemical Society and the Institute of Electrical and Electronics Engineers - Pennington, NJ: Soc, 14.2011, 11, S. H460-H463; http://dx.doi.org/10.1149/2.015111esl

Witte, Hartmut;  Wieneke, Matthias;  Rohrbeck, A.;  Guenther, K. M.;  Dadgar, Armin;  Krost, Alois 

Unintentional doping of a-plane GaN by insertion of in situ SiN masks
In: Journal of physics / D - Bristol: IOP Publ, Bd. 44.2011, 8, insges. 4 S.; http://dx.doi.org/10.1088/0022-3727/44/8/085102

Originalartikel in begutachteter zeitschriftenartiger Reihe

Dadgar, Armin;  Hempel, Thomas;  Bläsing, Jürgen;  Schulz, O.;  Fritze, Stephanie;  Christen, Jürgen;  Krost, Alois 

Improving GaN-on-silicon properties for GaN device epitaxy
In: Physica status solidi / C: pss - Berlin: Wiley-VCH, Bd. 8.2011, 5, S. 1503-1508; http://dx.doi.org/10.1002/pssc.201001137 ; [Special Issue: 3rd International Symposium on Growth of Group III-Nitrides (ISGN 3) E-MRS 2010 Spring Meeting Symposium G: Physics and Applications of Novel Gain Materials Based on IIIVN Compounds 14th International Conference on High Pressure Semiconductor Physics (HPSP14)]

2010

Begutachteter Zeitschriftenartikel

Lenz, A.;  Eisele, H.;  Becker, J.;  Ivanova, L.;  Lenz, E.;  Luckert, F.;  Pötschke, K.;  Strittmatter, A.;  Pohl, U.W.;  Bimberg, D.;  Dähne, M. 

Atomic Structure of buried InAs sub-monolayer depositions in GaAs
In: Applied Physics Express, Vol. 3, 2010, Issue 10, 10.1143/APEX.3.105602

Ostapenko, I.A.;  Hönig, G.;  Kindel, C.;  Rodt, S.;  Strittmatter, A.;  Hoffmann, A.;  Bimberg, D. 

Large internal dipole moment in InGaN/GaN quantum dots
In: Applied Physics Letters, Vol. 97, 2010, Issue 6, 10.1063/1.3477952

Germann, T.D.;  Strittmatter, A.;  Mutig, A.;  Nadtochiy, A.M.;  Lott, J.A.;  Blokhin, S.A.;  Karachinsky, L.Y.;  Shchukin, V.A.;  Ledentsov, N.N.;  Pohl, U.W.;  Bimberg, D. 

Monolithic electro-optically modulated vertical cavity surface emitting laser with 10 Gb/s open-eye operation
In: Physica Status Solidi (C) Current Topics in Solid State Physics, Vol. 7, 2010, Issue 10, S. 2552-2554, 10.1002/pssc.200983889

Cheng, B.;  Chua, C.L.;  Yang, Z.;  Teepe, M.;  Knollenberg, C.;  Strittmatter, A.;  Johnson, N. 

Nitride laser diodes with nonepitaxial cladding layers
In: IEEE Photonics Technology Letters, Vol. 22, 2010, Issue 5, S. 329-331, 10.1109/LPT.2009.2039564

Kirste, R.;  Wagner, M.R.;  Schulze, J.H.;  Strittmatter, A.;  Collazo, R.;  Sitar, Z.;  Alevli, M.;  Dietz, N.;  Hoffmann, A. 

Optical properties of InN grown on templates with controlled surface polarities
In: Physica Status Solidi (A) Applications and Materials Science, Vol. 207, 2010, Issue 10, S. 2351-2354, 10.1002/pssa.201026086

Usikov, A.;  Soukhoveev, V.;  Shapovalov, L.;  Syrkin, A.;  Ivantsov, V.;  Scanlan, B.;  Nikiforov, A.;  Strittmatter, A.;  Johnson, N.;  Zheng, J.-G.;  Spiberg, P.;  El-Ghoroury, H. 

Structural characterization of thick (112̿2) GaN layers grown by HVPE on m-plane sapphire
In: Physica Status Solidi (A) Applications and Materials Science, Vol. 207, 2010, Issue 6, S. 1295-1298, 10.1002/pssa.200983655

Buchbeitrag

Strittmatter, A.;  Teepe, M.;  Knollenberg, C.;  Yang, Z.;  Chua, C.;  Johnson, N.M.;  Spiberg, P.;  Ivantsov, V.;  Syrkin, A.;  Shapovalov, L.;  Usikov, A. 

Lasing of semi-polar InGaN/GaN(1122) heterostructures grown on m-plane sapphire substrates
In: Proceedings of SPIE - The International Society for Optical Engineering, Vol. 7616, 2010, 10.1117/12.842177

Strittmatter, A.;  Teepe, M.;  Yang, Z.;  Chua, C.;  Northrup, J.;  Johnson, N.M.;  Spiberg, P.;  Brown, R.G.W.;  Ivantsov, V.;  Syrkin, A.;  Shapovalov, L.;  Usikov, A. 

Optically-pumped lasing of semi-polar InGaN/GaN(1122) heterostructures
In: Physica Status Solidi (C) Current Topics in Solid State Physics, Vol. 7, 2010, Issue 7-8, S. 1814-1816, 10.1002/pssc.200983557

Herausgeberschaft

Li, Tingkai;  Mastro, Michael A.;  Dadgar, Armin 

III-V compound semiconductors - integration with silicon-based microelectronics
In: Boca Raton, Fla. [u.a.]: CRC Press; X, 593 S.: Ill., graph. Darst., ISBN 978-1-439-81522-9, 2010 ; [Literaturangaben]

Originalartikel in begutachteter internationaler Zeitschrift

Sakalauskas, Egidijus;  Behmenburg, H.;  Hums, C.;  Schley, Pascal;  Rossbach, Georg;  Giesen, C.;  Heuken, M.;  Kalisch, H.;  Jansen, R. H.;  Bläsing, Jürgen;  Dadgar, Armin;  Krost, Alois;  Goldhahn, Rüdiger 

Dielectric function and optical properties of Al-rich AlInN alloys pseudomorphically grown on GaN
In: Journal of physics . - Bristol : IOP Publ., Bd. 43.2010, 36, S. 365102, insges. 10 S.

Bastek, Barbara;  August, Olga;  Hempel, Thomas;  Christen, Jürgen;  Wieneke, Matthias;  Bläsing, Jürgen;  Dadgar, Armin;  Krost, Alois;  Wendt, Ulrich 

Direct microscopic correlation of crystal orientation and luminescence in spontaneously formed nonpolar and semipolar GaN growth domains
In: Applied physics letters. - Melville, NY : AIP; 96.2010, 17, Art. 172102, insges. 3 S.

Publikationslink

Mikulics, M.;  Stoklas, R.;  Dadgar, Armin;  Gregusová, D.;  Novak, J.;  Grützmacher, D.;  Krost, Alois;  Kordos, P. 

InAlN/GaN/Si heterostructures and field-effect transistors with lattice matched and tensely or compressively strained InAlN
In: Applied physics letters . - Melville, NY : AIP, Bd. 97.2010, 17, S. 173505-1-173505-3

Publikationslink

Lin, Vivian K. X.;  Tripathy, S.;  Teo, S. L.;  Dolmanan, S. B.;  Dadgar, Armin;  Noltemeyer, Martin;  Franke, Alexander;  Bertram, Frank;  Christen, Jürgen;  Krost, Alois 

Luminescence properties of photonic crystal InGaN/GaN light emitting layers on silicon-on-insulator
In: Electrochemical and solid-state letters. - Pennington, NJ : Soc; 13.2010, 10, S. H343-H345

Publikationslink

Reiher, F.;  Dadgar, Armin;  Bläsing, Jürgen;  Wieneke, Matthias;  Krost, Alois 

Metalorganic vapor-phase epitaxy of GaN layers on Si substrates with Si(1 1 0) and other high-index surfaces
In: Journal of crystal growth . - Amsterdam : North-Holland Publ. Co., Bd. 312.2010, 2, S. 180-184

Publikationslink

Ruiz-Zepeda, F.;  Contreras, O.;  Dadgar, Armin;  Krost, Alois 

Microstructure of gallium nitride films grown on silicon (110)
In: Applied physics letters . - Melville, NY : AIP, Bd. 96.2010, 23, insges. 3 S.

Publikationslink

Warnke, Christian;  Witte, Hartmut;  Mair, Thomas;  Hauser, Marcus;  Dadgar, Armin;  Krost, Alois 

Monitoring glycolytic oscillations using AlGaN/GaN high electron mobility transistors (HEMTs)
In: Sensors and actuators . - Amsterdam [u.a.] : Elsevier, Bd. 149.2010, 1, S. 310-313

Publikationslink

Ravash, Roghaiyeh;  Bläsing, Jürgen;  Dadgar, Armin;  Krost, Alois 

Semipolar single component GaN on planar high index Si(11h) substrates
In: Applied physics letters . - Melville, NY : AIP, Bd. 97.2010, 14, insges. 3 S.

Publikationslink

Krost, Alois;  Berger, C.;  Bläsing, Jürgen;  Franke, Alexander;  Hempel, Thomas;  Dadgar, Armin;  Christen, Jürgen 

Strain evaluation in AlInN/GaN Bragg mirrors by in situ curvature measurements and ex situ x-ray grazing incidence and transmission scattering
In: Applied physics letters. - Melville, NY : AIP, Bd. 97.2010, 18, S. 181105-1-181105-3

Publikationslink

Berger, C.;  Moser, Pascal;  Dadgar, Armin;  Bläsing, Jürgen;  Clos, Rainer;  Krost, Alois 

Strain profiling of AlInN/GaN distributed Bragg reflectors using in situ curvature measurements and ex situ X-ray diffraction
In: Materials science &amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;amp; engineering . - Amsterdam [u.a.] : Elsevier, Bd. 528.2010, 1, S. 58-64

Publikationslink

Alarcón-Lladó, Esther;  Bin-Dolmanan, Surani;  Kai Xin Lin, Vivian;  Lang Teo, Siew;  Dadgar, Armin;  Krost, Alois;  Tripathy, Sudhiranjan 

Temperature rise in InGaN/GaN vertical light emitting diode on copper transferred from silicon probed by Raman scattering
In: Journal of applied physics . - Melville, NY : AIP, Bd. 108.2010, 11, S. 114501-1-114501-5

Publikationslink

Rossbach, G.;  Röppischer, M.;  Schley, P.;  Gobsch, G.;  Werner, C.;  Cobet, C.;  Esser, N.;  Dadgar, Armin;  Wieneke, Matthias;  Krost, Alois;  Goldhahn, Rüdiger 

Valence-band splitting and optical anisotropy of AlN
In: Physica status solidi . - Weinheim : Wiley-VCH, insges. 4 S.; Abstract unter URL: http://dx.doi.org/10.1002/pssb.200983677, 2010

Wieneke, Matthias;  Bläsing, Jürgen;  Dadgar, Armin;  Krost, Alois 

X-ray study of step induced lateral correlation lengths in thin AlGaN nucleation layers
In: Japanese journal of applied physics . - Tokyo : Oyo Butsuri Gakkai, Bd. 49.2010, 2, insges. 3 S.

Publikationslink

Originalartikel in begutachteter zeitschriftenartiger Reihe

Witte, Hartmut;  Charpentier, Michael;  Warnke, Christian;  Müller, Mathias;  Günther, Kay-Michael;  Dadgar, Armin;  Krost, Alois 

Impedance spectroscopy of AlGaN/GaN HEMTs in contact with culture media
In: Physica status solidi . - Berlin : Wiley-VCH, Bd. 7.2010, 2, S. 464-467

Tripathy, S.;  Teo, S. L.;  Lin, V. K. X.;  Chen, M. F.;  Dadgar, Armin;  Christen, Jürgen;  Krost, Alois 

Light extraction from GaN-based LED structures on silicon-on-insulator substrates
In: Physica status solidi. - Berlin : Wiley-VCHPhysica status solidi / C, Bd. 7.2010, 1, S. 88-91

Publikationslink

2009

Begutachteter Zeitschriftenartikel

Reiher, F.;  Dadgar, Armin;  Bläsing, Jürgen;  Wieneke, Matthias;  Müller, M.;  Franke, A.;  Reißmann, L.;  Christen, Jürgen;  Krost, Alois 

InGaN/GaN light-emitting diodes on Si(1 1 0) substrates grown by metalorganic vapour phase epitaxy
In: Journal of physics / D - Bristol: IOP Publ, Vol. 42.2009, 5, Art. 055107, insgesamt 5 S.; http://dx.doi.org/10.1088/0022-3727/42/5/055107

Reiher, F.;  Dadgar, A.;  Bläsing, J.;  Wieneke, M.;  Müller, M.;  Franke, A.;  Reißmann, L.;  Christen, J.;  Krost, A. 

InGaN/GaN light-emitting diodes on Si(1 1 0) substrates grown by metal--organic vapour phase epitaxy
In: Journal of Physics D: Applied Physics, Vol. 42, Issue 5, S. 055107, ISSN 0022-3727, 2009, 10.1088/0022-3727/42/5/055107

Buchbeitrag

Loschonsky, Marc;  Eisele, David;  Masson, Jeremy;  Wieneke, Matthias;  Alzuaga, Sebastien;  Dadgar, Armin;  Ballandras, Sylvian;  Krost, Alois;  Reindl, Leonhard 

High-overtone bulk acoustic wave resonator on galliumnitride
In: IEEE International Frequency Control Symposium, 2009 joint with the 22nd [i.e. 23rd] European Frequency and Time Forum . - Piscataway, NJ : IEEE, ISBN 978-1-424-43511-1, S. 309 - 315; Abstract unter URL: http://dx.doi.org/10.1109/FREQ.2009.5168192 ; Kongress: IEEE International Frequency Control Symposium; 63 (Besançon) : 2009.04.20-24

Ledentsov, N.N.;  Lott, J.A.;  Shchukin, V.A.;  Quast, H.;  Hopfer, F.;  Fiol, G.;  Mutig, A.;  Moser, P.;  Germann, T.;  Strittmatter, A.;  Karachinsky, L.Y.;  Blokhin, S.A.;  Novikov, I.I.;  Nadtochi, A.M.;  Zakharov, N.D.;  Werner, P.;  Bimberg, D. 

Quantum dot insertions in VCSELs from 840 to 1300 nm: Growth, characterization, and device performance
In: Proceedings of SPIE - The International Society for Optical Engineering, Vol. 7224, 2009, 10.1117/12.810192

Originalartikel in begutachteter internationaler Zeitschrift

Hums, Christoph;  Gadanecz, Aniko;  Dadgar, Armin;  Bläsing, Jürgen;  Lorenz, Pierre;  Krischok, Stefan;  Bertram, Frank;  Franke, Alexander;  Schaefer, J. A.;  Christen, Jürgen;  Krost, Alois 

AllnN/GaN based multi quantum well structures - growth and optical proberties
In: Physica status solidi . - Berlin : Wiley-VCH, insges. 4 S.; Abstract unter URL: http://dx.doi.org/10.1002/pssc.200880899, 2009

Bastek, Barbara;  Bertram, Frank;  Christen, Jürgen;  Hempel, Thomas;  Dadgar, Armin;  Krost, Alois 

Analysis of point defects in AlN epilayers by cathodoluminescence spectroscopy
In: Applied physics letters . - Melville, NY : AIP, Bd. 95.2009, 3, insges. 3 S.

Publikationslink

Schenk, H. P. D.;  Borenstain, S. I.;  Berezin, A.;  Schön, A.;  Cheifetz, E.;  Dadgar, Armin;  Krost, Alois 

Cathodoluminescence of epitaxial GaN and ZnO thin films for scintillator applications
In: Journal of crystal growth . - Amsterdam : North-Holland Publ. Co., Bd. 311.2009, 16, S. 3984-3988

Publikationslink

Witte, Hartmut;  Günther, K.-M.;  Wieneke, Matthias;  Bläsing, Jürgen;  Dadgar, Armin;  Krost, Alois 

Characterization of defects in undoped non c-plane and high resistance GaN layers dominated by stacking faults
In: Physica . - Amsterdam : North-Holland Physics Publ., Bd. 404.2009, 23/24, S. 4922-4924

Publikationslink

Mei, Yongfeng;  Thurmer, Dominic J.;  Deneke, Christoph;  Kiravittaya, Suwit;  Chen, Yuan-Fu;  Dadgar, Armin;  Bertram, Frank;  Bastek, Barbara;  Krost, Alois;  Christen, Jürgen;  Reindl, Thomas;  Stoffel, Mathieu;  Coric, Emica;  Schmidt, Oliver G. 

Fabrication, self-assembly, and properties of ultrathin AlN/GaN porous crystalline nanomembranes - tubes, spirals, and curved sheets
In: American Chemical Society : ACS nano . - Washington, DC : ACS, Bd. 3.2009, 7, S. 1663-1668

Publikationslink

Buchheim, Carsten;  Röppischer, Marcus;  Goldhahn, Rüdiger;  Gobsch, Gerhard;  Cobet, Christoph;  Werner, C.;  Esser, Norbert;  Dadgar, Armin;  Wieneke, M.;  Bläsing, Jürgen;  Krost, Alois 

Influence of anisotropic strain on excitonic transitions in a-plane GaN films
In: Microelectronics journal . - Oxford : Elsevier Advanced Technology, Bd. 40.2009, 2, S. 322-324

Publikationslink

Saengkaew, Phannee;  Dadgar, Armin;  Bläsing, Jürgen;  Hempel, Thomas;  Veit, Peter;  Christen, Jürgen;  Krost, Alois 

Low-temperature/high-temperature AlN superlattice buffer layers for high-quality Al x Ga 1-x N on Si (111)
In: Journal of crystal growth . - Amsterdam : North-Holland Publ. Co., Bd. 311.2009, 14, S. 3742-3748

Publikationslink

Saengkaew, Phannee;  Dadgar, Armin;  Bläsing, Jürgen;  Bastek, Barbara;  Bertram, Frank;  Reiher, Fabian;  Hums, Christoph;  Noltemeyer, Martin;  Hempel, Thomas;  Veit, Peter;  Christen, Jürgen;  Krost, Alois 

MOVPE growth of high-quality Al 0.1 Ga 0.9 N on Si(111) substrates for UV-LEDs
In: Physica status solidi . - Berlin : Wiley-VCH, insges. 4 S.; Abstract unter URL: http://dx.doi.org/10.1002/pssc.200880917, 2009

Ravash, Roghaiyeh;  Bläsing, Jürgen;  Hempel, Thomas;  Noltemeyer, Martin;  Dadgar, Armin;  Christen, Jürgen;  Krost, Alois 

Metal organic vapor phase epitaxy growth of single crystalline GaN on planar Si(211) substrates
In: Applied physics letters . - Melville, NY : AIP, Bd. 95.2009a24, insges. 3 S.

Publikationslink

Wieneke, Matthias;  Bläsing, Jürgen;  Dadgar, Armin;  Veit, Peter;  Metzner, Sebastian;  Bertram, Frank;  Christen, Jürgen;  Krost, Alois 

Micro-structural anisotropy of a-plane GaN analyzed by high resolution X-ray diffraction
In: Physica status solidi . - Berlin : Wiley-VCH, insges. 4 S.; Abstract unter URL: http://dx.doi.org/10.1002/pssc.200880964, 2009

Witte, Hartmut;  Hums, Christoph;  Baer, C.;  Günther, K.-M.;  Krtschil, A.;  Dadgar, Armin;  Krost, Alois 

Photoelectric proberties of the undoped GaN/AlN interlayer/high purity Si(111) interface
In: Journal of physics . - Bristol : IOP Publ., Bd. 42.2009, 20, insges. 6 S.

Publikationslink

Originalartikel in begutachteter zeitschriftenartiger Reihe

Mäki, J.-M.;  Tuomisto, F.;  Bastek, Barbara;  Bertam, Frank;  Christen, Jürgen;  Dadgar, Armin;  Krost, Alois 

Effect of growth conditions on vacancy defects in MOVPE grown AlN thin layers
In: Physica status solidi . - Berlin : Wiley-VCH, Bd. 6.2009, 11, S. 2575-2577

Publikationslink

Tripathy, S.;  Dadgar, Armin;  Zang, K. Y.;  Lin, V. K. X.;  Liu, Y. C.;  Teo, S. L.;  Yong, A. M.;  Soh, C. B.;  Chua, S. J.;  Bläsing, Jürgen;  Christen, Jürgen;  Krost, Alois 

GaN-based deep green light emitting diodes on silicon-on-insulator substrates
In: Physica status solidi . - Berlin : Wiley-VCH, Bd. 6.2009, 2, S. 822-825

Publikationslink

2008

Begutachteter Zeitschriftenartikel

Strittmatter, A.;  Germann, T.D.;  Pohl, J.;  Pohl, U.W.;  Bimberg, D.;  Rautiainen, J.;  Guina, M.;  Okhotnikov, O.G. 

1040nm vertical external cavity surface emitting laser based on InGaAs quantum dots grown in Stranski-Krastanow regime
In: Electronics Letters, Vol. 44, 2008, Issue 4, S. 290-291, 10.1049/el:20083131

Germann, T.D.;  Strittmatter, A.;  Pohl, J.;  Pohl, U.W.;  Bimberg, D.;  Rautiainen, J.;  Guina, M.;  Okhotnikov, O.G. 

High-power semiconductor disk laser based on InAs/GaAs submonolayer quantum dots
In: Applied Physics Letters, Vol. 92, 2008, Issue 10, 10.1063/1.2898165

Winkelnkemper, M.;  Seguin, R.;  Rodt, S.;  Schliwa, A.;  Reißmann, L.;  Strittmatter, A.;  Hoffmann, A.;  Bimberg, D. 

Polarized emission lines from single InGaN/GaN quantum dots: Role of the valence-band structure of wurtzite Group-III nitrides
In: Physica E: Low-Dimensional Systems and Nanostructures, Vol. 40, 2008, Issue 6, S. 2217-2219, 10.1016/j.physe.2007.11.033

Germann, T.D.;  Strittmatter, A.;  Pohl, U.W.;  Bimberg, D.;  Rautiainen, J.;  Guina, M.;  Okhotnikov, O.G. 

Quantum-dot semiconductor disk lasers
In: Journal of Crystal Growth, Vol. 310, 2008, Issue 23, S. 5182-5186, 10.1016/j.jcrysgro.2008.07.004

Strittmatter, A.;  Germann, T.D.;  Kettler, Th.;  Posilovic, K.;  Pohl, J.;  Pohl, U.W.;  Bimberg, D. 

Suppression of the wavelength blue shift during overgrowth of InGaAs-based quantum dots
In: Journal of Crystal Growth, Vol. 310, 2008, Issue 23, S. 5066-5068, 10.1016/j.jcrysgro.2008.07.069

Germann, T.D.;  Strittmatter, A.;  Pohl, J.;  Pohl, U.W.;  Bimberg, D.;  Rautiainen, J.;  Guina, M.;  Okhotnikov, O.G. 

Temperature-stable operation of a quantum dot semiconductor disk laser
In: Applied Physics Letters, Vol. 93, 2008, Issue 5, 10.1063/1.2968137

Buchbeitrag

Schlosser, P.;  Calvez, S.;  Hastie, J.E.;  Jin, S.;  Germann, T.D.;  Strittmatter, A.;  Pohl, U.W.;  Bimberg, D.;  Dawson, M.D. 

Characterisation of an InAs quantum dot semiconductor disk laser
In: 2008 Conference on Quantum Electronics and Laser Science Conference on Lasers and Electro-Optics, CLEO/QELS, 2008, 10.1109/CLEO.2008.4551842

Schlosser, P.;  Calvez, S.;  Hastie, J.E.;  Jin, S.;  Germann, T.D.;  Strittmatter, A.;  Pohl, U.W.;  Bimberg, D.;  Dawson, M.D. 

Characterisation of an InAs quantum dot semiconductor disk laser
In: Optics InfoBase Conference Papers, 2008

Hopfer, F.;  Mutig, A.;  Strittmatter, A.;  Fiol, G.;  Moser, P.;  Bimberg, D.;  Shchukin, V.A.;  Ledentsov, N.N.;  Lott, J.A.;  Quast, H.;  Kuntz, M.;  Mikhrin, S.S.;  Krestnikov, I.L.;  Livshits, D.A.;  Kovsh, A.R.;  Bornholdt, C. 

High-speed directly and indirectly modulated VCSELs
In: Conference Proceedings - International Conference on Indium Phosphide and Related Materials, 2008, 10.1109/ICIPRM.2008.4703064

Loschonsky, Marc;  Eisele, David;  Dadgar, Armin;  Krost, Alois;  Ballandras, Sylvain;  Reindl, Leonhard 

Investigations of a-plane and c-plane GaN-based synchronous surface acoustic wave resonators
In: 2008 IEEE International Frequency Control Symposium ; tutorials-May 18, 2008; symposium May 19-21 . - [Piscataway, NJ] : IEEE, ISBN 978-1-424-41795-7, S. 320-325 ; Kongress: IEEE-FCS; 62 (Honolulu, Hawaii, USA) : 2008.05.19-21

Winkelnkemper, M.;  Dworzak, M.;  Battel, T.P.;  Strittmatter, A.;  Hoffmann, A.;  Bimberg, D. 

Origin of the broad lifetime distribution of localized excitons in InGaN/GaN quantum dots
In: Physica Status Solidi (B) Basic Research, Vol. 245, 2008, Issue 12, S. 2766-2770, 10.1002/pssb.200844129

Werner, S.;  Zimmer, P.;  Strittmatter, A.;  Hoffmann, A. 

Phonon interaction in InGaAs/GaAs quantum dots
In: Materials Research Society Symposium Proceedings, Vol. 1053, 2008, S. 12-16

Germann, T.D.;  Strittmatter, A.;  Pohl, J.;  Pohl, U.W.;  Bimberg, D.;  Rautiainen, J.;  Guina, M.;  Okhotnikov, O.G. 

Quantum-dot semiconductor disk-lasers
In: 2008 Int. Nano-Optoelectronics Workshop, iNOW 2008 in Cooperation With Int. Global-COE Summer School (Photonics Integration-Core Electronics: PICE) and 31st Int. Symposium on Optical Communications, 2008, S. 197-198, 10.1109/INOW.2008.4634508

Shchukin, V.A.;  Ledentsov, N.N.;  Lott, J.A.;  Quast, H.;  Hopfer, F.;  Karachinsky, L.Ya.;  Kuntz, M.;  Moser, P.;  Mutig, A.;  Strittmatter, A.;  Kalosha, V.P.;  Bimberg, D. 

Ultrahigh-speed electrooptically-modulated VCSELs: Modeling and experimental results
In: Proceedings of SPIE - The International Society for Optical Engineering, Vol. 6889, 2008, 10.1117/12.784371

Originalartikel in begutachteter internationaler Zeitschrift

Contreras, Oscar E.;  Ruiz-Zepeda, Francisco;  Dadgar, Armin;  Krost, Alois;  Ponce, Fernando A. 

Atomic arrangement at the AlN/Si(110) interface
In: Applied physics express . - Tokyo : Oyo Butsuri Gakkai, Bd. 1.2008, 6, S. 061104-1-061104-3

Publikationslink

Tripathy, S.;  Sale, T. E.;  Dadgar, Armin;  Lin, V. K. X.;  Zang, K. Y.;  Teo, S. L.;  Chua, S. J.;  Bläsing, Jürgen;  Krost, Alois 

GaN-based microdisk light emitting diodes on (111)-oriented nanosilicon-on-insulator templates
In: Journal of applied physics . - Melville, NY : AIP, Bd. 104.2008, 5, S. 053106-1-053106-7

Publikationslink

Brueckner, K.;  Niebelschuetz, F.;  Tonisch, K.;  Michael, S.;  Dadgar, Armin;  Krost, Alois;  Cimalla, V.;  Ambacher, O.;  Stephan, R.;  Hein, M. A. 

Two-dimensional electron gas based actuation of piezoelectric AlGaN/GaN microelectromechanical resonators
In: Applied physics letters . - Melville, NY : AIP, Bd. 93.2008, 17, S. 173504-1-173504-3

Publikationslink

Originalartikel in begutachteter zeitschriftenartiger Reihe

Ruiz-Zepeda, F.;  Contreras, O.;  Dadgar, Armin;  Krost, Alois 

GaN growth on silane exposed AlN seed layers
In: Physica status solidi . - Berlin : Wiley-VCH, Bd. 5.2008, 6, S. 1675-1677

Hums, Christopher;  Gadanecz, Aniko;  Dadgar, Armin;  Bläsing, Jürgen;  Witte, Hartmut;  Hempel, Thomas;  Dietz, Annette;  Lorenz, Pierre;  Krischok, Stefan;  Schäfer, Jürgen Alois;  Christen, Jürgen;  Krost, Alois 

MOVPE growth and characterization of AllnN FET structures on Si(1 1 1)
In: Advances in GaN, GaAs, SiC and related alloys on silicon substrates. - Warrendale, Pa. : MRS, insges. 6 S., 2008 - (Materials Research Society symposium proceedings; 1068) ; Kongress: MRS Spring Meeting; (San Francisco, Calif.) : 2008.03.24-28

Schulze, Fabian;  Dadgar, Armin;  Krtschil, André;  Hums, Christoph;  Reißmann, Lars;  Diez, Annette;  Christen, Jürgen;  Krost, Alois 

MOVPE growth of blue In xGa 1-x/GaN LEDs on 150 mm Si(001)
In: Physica status solidi . - Berlin : Wiley-VCH, Bd. 5.2008, 6, S. 2238-2240

2007

Begutachteter Zeitschriftenartikel

Hums, C.;  Blasing, J.;  Dadgar, A.;  Diez, A.;  Hempel, T.;  Christen, J.;  Krost, A.;  Lorenz, K.;  Alves, E. 

Erratum: ``Metal-organic vapor phase epitaxy and properties of AlInN in the whole compositional range'' [Appl. Phys. Lett. 90, 022105 (2007)]
In: Applied Physics Letters, Vol. 91, Issue 13, S. 139901, ISSN 00036951, 2007, 10.1063/1.2785981

Germann, T.D.;  Strittmatter, A.;  Kettler, Th.;  Posilovic, K.;  Pohl, U.W.;  Bimberg, D. 

MOCVD of InGaAs/GaAs quantum dots for lasers emitting close to 1.3 μm
In: Journal of Crystal Growth, Vol. 298, 2007, Issue SPEC. ISS, S. 591-594, 10.1016/j.jcrysgro.2006.10.081

Dadgar, A.;  Veit, P.;  Schulze, F.;  Bläsing, J.;  Krtschil, A.;  Witte, H.;  Diez, A.;  Hempel, T.;  Christen, J.;  Clos, R.;  Krost, A. 

MOVPE growth of GaN on Si -- Substrates and strain
In: Thin Solid Films, Vol. 515, Issue 10, S. 4356--4361, ISSN 00406090, 2007, 10.1016/j.tsf.2006.07.100

Winkelnkemper, M.;  Seguin, R.;  Rodt, S.;  Schliwa, A.;  Reißmann, L.;  Strittmatter, A.;  Hoffmann, A.;  Bimberg, D. 

Polarized emission lines from A - And B -type excitonic complexes in single InGaN/GaN quantum dots
In: Journal of Applied Physics, Vol. 101, 2007, Issue 11, 10.1063/1.2743893

Gaubas, E.;  Vaitkus, J.;  Kazlauskas, K.;  Žukauskas, A.;  Grant, J.;  Bates, R.;  O'shea, V.;  Strittmatter, A.;  Bimberg, D.;  Gibart, P. 

Recombination characteristics of the proton and neutron irradiated semi-insulating GaN structures
In: Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Vol. 583, 2007, Issue 1, S. 181-184, 10.1016/j.nima.2007.08.195

Dissertation

Posevitz-Fejfár, Anita 

Functional elucidation of pag through the generation of truncation and point mutants
In: Magdeburg, Univ., Fak. für Naturwiss., Diss., 2007; V, 97 S.: Ill., graph. Darst.; 30 cm

Publikationslink

Originalartikel in begutachteter internationaler Zeitschrift

Schulze, Fabian;  Dadgar, Armin;  Bertram, Frank;  Bläsing, Jürgen;  Diez, Annette;  Veit, Peter;  Clos, Rainer;  Christen, Jürgen;  Krost, Alois 

Blue light emitting diodes on Si(001) grown by MOVPE
In: Physica status solidi . - Berlin : Wiley-VCH, Bd. 4.2007, 1, S. 41-44; Abstract unter URL: http://dx.doi.org/10.1002/pssc.200673534

Bertram, Frank;  Christen, Jürgen;  Dadgar, Armin;  Krost, Alois 

Complex excitonic recombination kinetics in ZnO - capture, relaxation, and recombination from steady state
In: Applied physics letters . - Melville, NY : AIP, Bd. 90.2007, 4, S. 041917, insges. 3 S.

Publikationslink

Schulze, Fabian;  Kisel, Olga;  Dadgar, Armin;  Krtschil, André;  Bläsing, Jürgen;  Kunze, M.;  Daumiller, I.;  Hempel, Thomas;  Diez, Annette;  Clos, Rainer;  Christen, Jürgen;  Krost, Alois 

Crystallographic and electric proberties of MOVPE-grown AlGaN/GaN-based FETs on Si(001) substrates
In: Journal of crystal growth . - Amsterdam : North-Holland Publ. Co., Bd. 299.2007, 2, S. 399-403

Publikationslink

Krtschil, Andre;  Dadgar, Armin;  Diez, Annette;  Krost, Alois 

Electrical characterization of defect states in local conductivity domains in ZnO:N,As layers
In: Journal of materials research . - : Warrendale, Pa. : Materials Research Society, Bd. 22.2007, 7, S. 1775-1778

Publikationslink

Dadgar, Armin;  Schulze, Fabian;  Wienecke, M.;  Gadanecz, A.;  Bläsing, Jürgen;  Veit, Peter;  Hempel, Thomas;  Diez, Annette;  Christen, Jürgen;  Krost, Alois 

Epitaxy of GaN on silicon - impact of symmetry and surface reconstruction
In: New journal of physics . - London : IOP Publ., Bd. 9.2007, 10, insges. 10 S.; Abstract unter URL: http://dx.doi.org/10.1088/1367-2630/9/10/389

Hums, Christoph;  Finger, Tilo;  Hempel, Thomas;  Christen, Jürgen;  Dadgar, Armin;  Hoffmann, A.;  Krost, Alois 

Fabry-perot effects in InGaN/GaN heterostructures on Si-substrate
In: Journal of applied physics . - Melville, NY : AIP, Bd. 101.2007, 3, S. 033113, insges. 4 S.

Publikationslink

Heinze, Sören;  Krtschil, André;  Bläsing, Jürgen;  Hempel, Thomas;  Veit, Peter;  Dadgar, Armin;  Christen, Jürgen;  Krost, Alois 

Homoepitaxial growth of ZnO by metalorganic vapor phase epitaxy in two-dimensional growth mode
In: Journal of crystal growth . - Amsterdam : North-Holland Publ. Co., Bd. 300.2007, 1, S. 170-175

Publikationslink

Tripathy, S.;  Lin, V. K. X.;  Teo, S. L.;  Dadgar, Armin;  Diez, Annette;  Bläsing, Jürgen;  Krost, Alois 

InGaN/GaN light emitting diodes on nanoscale silicon on insulator
In: Applied physics letters . - Melville, NY : AIP, Bd. 91.2007, 23, S. 231109-1-231109-3

Publikationslink

Kim, Dong Sik;  Ji, Ran;  Fan, Jin;  Bertram, Frank;  Scholz, Roland;  Dadgar, Armin;  Nielsch, Kornelius;  Krost, Alois;  Christen, Jürgen;  Gösele, Ulrich;  Zacharias, Margit 

Laser-interface lithography tailored for highly symmetrically arranged ZnO nanowire arrays
In: Small . - Weinheim : Wiley-VCH Verl., Bd. 3.2007, 1, S. 76-80; Abstract unter URL: http://dx.doi.org/10.1002/smll.200600307

Hums, Christoph;  Bläsing, Jürgen;  Dadgar, Armin;  Diez, Annette;  Hempel, Thomas;  Christen, Jürgen;  Krost, Alois;  Lorenz, K.;  Alves, E. 

Metal-organic vapor phase epitaxy and properties of AllnN in the whole compositional range
In: Applied physics letters . - Woodbury, NY : Inst., Bd. 90.2007, S. 022105-1-022105-3; Abstract unter URL: http://dx.doi.org/10.1063/1.2424649

Goldhahn, Rüdiger;  Winzer, Andreas T.;  Dadgar, Armin;  Krost, Alois;  Weidemann, O.;  Eickhoff, M. 

Modulation spectroscopy of AlGaN/GaN heterostructures - the influence of electron-hole interaction
In: Physica status solidi . - Berlin : Wiley-VCH, Bd. 204.2007, 2, S. 447-458

Publikationslink

Gadanecz, Aniko;  Bläsing, Jürgen;  Dadgar, Armin;  Hums, Christoph;  Krost, Alois 

Thermal stability of metal organic vapor phase epitaxy grown AlInN
In: Applied physics letters . - Melville, NY : AIP, Bd. 90.2007, 22, S. 221906-1-221906-3

Publikationslink

Originalartikel in begutachteter zeitschriftenartiger Reihe

Krtschil, Andre;  Dadgar, Armin;  Diez, Annette;  Krost, Alois 

Electrical characterization of defect states in local conductivity domains in ZnO:N,As layers
In: Zinc oxide and related materials. - Warrendale, Pa. : Materials Research Society, insges. 6 S., 2007 - (Materials Research Society symposium proceedings; 957) ; Kongress: MRS fall meeting; (Boston, Mass.) : 2006.11.27-30

Heinze, Sören;  Dadgar, Armin;  Bertram, Frank;  Krtschil, André;  Bläsing, Jürgen;  Witte, Hartmut;  Tiefenau, S.;  Hempel, Thomas;  Diez, Annette;  Christen, Jürgen;  Krost, Alois 

Metalorganic vapor phase epitaxy of ZnO - towards p-type conductivity
In: Zinc oxide materials and devices II. - Bellingham, Wash. : SPIE, insges. 15 S., 2007 - (Proceedings of SPIE; 6474)

Loschonsky, Marc;  Reindl, Leonhard;  Dadgar, Armin;  Wieneke, Matthias;  Bläsing, Jürgen;  Krost, Alois 

a-plane GaN shear wave thin film resonator
In: 2007 IEEE International Frequency Control Symposium jointly with the 21st European Frequency and Time Forum. - [Piscataway, NJ] : IEEE, S. 494-498 ; Kongress: ENC-GNSS; 11 (Geneva) : 2007.05.29-06.01 ; EFTF-FCS; (Geneva) : 2007.05.29-06.01 ; IEEE-FCS; (Geneva) : 2007.05.29-06.01[Beitrag auf CD-ROM]

2006

Artikel in Kongressband

Dadgar, A.;  Hums, C.;  Diez, A.;  Schulze, F.;  Blasing, J.;  Krost, A.;   

Epitaxy of GaN LEDs on large substrates: Si or sapphire?
In: S. 63550R--63550R-8, 2006, 10.1117/12.691576

Begutachteter Zeitschriftenartikel

Strittmatter, A.;  Germann, T.D.;  Kettler, T.;  Posilovic, K.;  Pohl, U.W.;  Bimberg, D. 

Alternative precursor metal-organic chemical vapor deposition of InGaAs/GaAs quantum dot laser diodes with ultralow threshold at 1.25 μm
In: Applied Physics Letters, Vol. 88, 2006, Issue 26, 10.1063/1.2218059

Seguin, R.;  Schliwa, A.;  Germann, T.D.;  Rodt, S.;  Pötschke, K.;  Strittmatter, A.;  Pohl, U.W.;  Bimberg, D.;  Winkelnkemper, M.;  Hammerschmidt, T.;  Kratzer, P. 

Control of fine-structure splitting and excitonic binding energies in selected individual InAs/GaAs quantum dots
In: Applied Physics Letters, Vol. 89, 2006, Issue 26, 10.1063/1.2424446

Muller, A.;  Neculoiu, D.;  Vasilache, D.;  Dascalu, D.;  Konstantinidis, G.;  Kosopoulos, A.;  Adikimenakis, A.;  Georgakilas, A.;  Mutamba, K.;  Sydlo, C.;  Hartnagel, H. L.;  Dadgar, A. 

GaN micromachined FBAR structures for microwave applications
In: SUPERLATTICES AND MICROSTRUCTURES, Vol. 40, S. 426--431, 2006, 10.1016/j.spmi.2006.07.014

Hardtdegen, H.;  Kaluza, N.;  Sofer, Z.;  Cho, Y.S.;  Steins, R.;  Bay, H.L.;  Dikme, Y.;  Kalisch, H.;  Jansen, R.H.;  Heuken, M.;  Strittmatter, A.;  Reißmann, L.;  Bimberg, D.;  Zettler, J.-T. 

New method for the in situ determination of Al <inf>x</inf>Ga <inf>1-x</inf>N composition in MOVPE by real-time optical reflectance
In: Physica Status Solidi (A) Applications and Materials Science, Vol. 203, 2006, Issue 7, S. 1645-1649, 10.1002/pssa.200565313

Riemann, T.;  Hempel, T.;  Christen, J.;  Veit, P.;  Clos, R.;  Dadgar, A.;  Krost, A.;  Haboeck, U.;  Hoffmann, A. 

Optical and structural microanalysis of GaN grown on SiN submonolayers
In: JOURNAL OF APPLIED PHYSICS, Vol. 99, S. -, 2006, 10.1063/1.2150589

Originalartikel in begutachteter internationaler Zeitschrift

Knauer, A.;  Krispin, P.;  Dadgar, Armin;  Weyers, M. 

Avoidance of surface-related defects on MOVPE-grown InGaP layers
In: Journal of crystal growth . - Amsterdam : North-Holland Publ. Co., Bd. 287.2006, 2, S. 633-636; Abstract unter URL: http://www.sciencedirect.com/science?_ob=ArticleURL&amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;_udi=B6TJ6-4HNSJS8-10&amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;_user=1908389&amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;_handle=V-WA-A-W-AUY-MsSAYWW-UUA-U-AACZUCUVAD-AACBZBAWAD-ACCYCWAB-AUY-U&amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;_fmt=summary&amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;_coverDate=01%2F25%2F2006&amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;_rdoc=93&amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;_orig=browse&amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;_srch=%23toc%235302%232006%23997129997%23614855!&amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;_cdi=5302&amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;view=c&amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;_acct=C000052693&amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;_version=1&amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;_urlVersion=0&amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;_userid=1908389&amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;md5=6c8d6b890f61653a51c976e6185b6994

Winzer, Andreas T.;  Goldhahn, Rüdiger;  Gobsch, Gerhard;  Dadgar, Armin;  Krost, Alois;  Weidemann, O.;  Stutzmann, Martin;  Eickhoff, Martin 

Electroreflectance spectroscopy of Pt/AlGaN/GaN heterostructures exposed to gaseous hydrogen
In: Applied physics letters . - Woodbury, NY : Inst., Bd. 88.2006, 2, S. 024101, insges. 3 S.; Abstract unter URL: http://dx.doi.org/10.1063/1.2161394

Dadgar, Armin;  Hums, Christoph;  Diez, Annette;  Bläsing, Jürgen;  Krost, Alois 

Growth of blue GaN LED structures on 150-mm Si(111)
In: Journal of crystal growth . - Amsterdam : North-Holland Publ. Co., Bd. 297.2006, 2, S. 279-282; Abstract unter URL: http://han.med.uni-magdeburg.de/han/2776/www.sciencedirect.com/science?_ob=ArticleURL&amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;_udi=B6TJ6-4M877S4-2&amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;_user=1908396&amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;_handle=C-WA-A-BA-BA-MsSAYVA-UUA-U-U-BA-U-U-AADUEAVYEU-AAZYVECZEU-WUUVBDACY-BA-U&amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;_fmt=summary&amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;_coverDate=12%2F29%2F2006&amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;_rdoc=3&amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;_orig=browse&amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;_srch=%23toc%235302%232006%23997029997%23639777!&amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;_cdi=5302&amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;_acct=C000052693&amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;_version=1&amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;_urlVersion=0&amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;_userid=1908396&amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;md5=a370353bbe7980668fe0219272ede560

Schulze, F.;  Dadgar, Armin;  Bläsing, Jürgen;  Hempel, Thomas;  Diez, Annette;  Christen, Jürgen;  Krost, Alois 

Growth of single-domain GaN on Si(0 0 1) by metalorganic vapor-phase epitaxy
In: Journal of crystal growth . - Amsterdam : North-Holland Publ. Co., Bd. 289.2006, 2, S. 485-488; Abstract unter URL: http://www.sciencedirect.com/science?_ob=ArticleURL&amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;_udi=B6TJ6-4J32HHD-D&amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;_user=1908389&amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;_handle=V-WA-A-W-CZ-MsSAYZW-UUA-U-AACZUCDYVZ-AACBZBYZVZ-ACZEYYBV-CZ-U&amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;_fmt=summary&amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;_coverDate=04%2F01%2F2006&amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;_rdoc=14&amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;_orig=browse&amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;_srch=%23toc%235302%232006%23997109997%23618635!&amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;_cdi=5302&amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;view=c&amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;_acct=C000052693&amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;_version=1&amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;_urlVersion=0&amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;_userid=1908389&amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;md5=e31b7a130f5b4f153d9f7bdd4ca7e20e

Winzer, Andreas T.;  Gobsch, Gerhard;  Goldhahn, Rüdiger;  Fuhrmann, Daniel;  Hangleiter, A.;  Dadgar, Armin;  Krost, Alois 

Influence of excitons and electric fields on the dielectric function of GaN - theory and experiment
In: Physical review . - College Park, Md. : APS, Bd. 74.2006, 12, S. 125207, insges. 10 S.; Abstract unter URL: http://dx.doi.org/10.1103/PhysRevB.74.125207

Krtschil, Andre;  Look, D. C.;  Fang, Z.-Q.;  Dadgar, Armin;  Diez, Annette;  Krost, Alois 

Local p-type conductivity in n-GaN and n-ZnO layers due to inhomogeneous dopant incoporation
In: Physica . - Amsterdam : North-Holland Physics Publ., Bd. 376/377.2006, S. 703-706; Abstract unter URL: http://www.sciencedirect.com/science?_ob=ArticleURL&amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;_udi=B6TVH-4J3NYBD-19&amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;_user=1908389&amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;_handle=V-WA-A-W-WVD-MsSAYVA-UUA-U-AACCEZVAYZ-AACBCVVEYZ-AWEWDWYC-WVD-U&amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;_fmt=summary&amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;_coverDate=04%2F01%2F2006&amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;_rdoc=179&amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;_orig=browse&amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;_srch=%23toc%235535%232006%23996239999%23619446!&amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;_cdi=5535&amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;view=c&amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;_acct=C000052693&amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;_version=1&amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;_urlVersion=0&amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;_userid=1908389&amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;md5=a57c3e4923b1b338d5d49503a28e3ab6

Dadgar, Armin;  Veit, Peter;  Schulze, Fabian;  Bläsing, Jürgen;  Krtschil, André;  Witte, Hartmut;  Diez, Annette;  Hempel, Thomas;  Christen, Jürgen;  Clos, Rainer;  Krost, Alois 

MOVPE growth of GaN on Si - substrates and strain
In: Thin solid films . - Amsterdam [u.a.] Elsevier, Bd. 515.2007, 10, S. 4356-4361

Publikationslink

Dadgar, Armin;  Krost, Alois;  Christen, Jürgen;  Bastek, Barbara;  Bertram, Frank;  Krtschil, André;  Hempel, Thomas;  Bläsing, Jürgen;  Haboeck, U.;  Hoffmann, A. 

MOVPE growth of high-quality AIN
In: Journal of crystal growth . - Amsterdam : North-Holland Publ. Co., Bd. 297.2006, 2, S. 306-210; Abstract unter URL: http://han.med.uni-magdeburg.de/han/2776/www.sciencedirect.com/science?_ob=ArticleURL&amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;_udi=B6TJ6-4MC71Y0-2&amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;_user=1908396&amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;_handle=C-WA-A-BA-BA-MsSAYVA-UUA-U-U-BA-U-U-AADUEAVYEU-AAZYVECZEU-WUUVBDACY-BA-U&amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;_fmt=summary&amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;_coverDate=12%2F29%2F2006&amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;_rdoc=8&amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;_orig=browse&amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;_srch=%23toc%235302%232006%23997029997%23639777!&amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;_cdi=5302&amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;_acct=C000052693&amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;_version=1&amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;_urlVersion=0&amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;_userid=1908396&amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;md5=b47537f4d69e1731f90dc46ef4ccb325

Fehse, Kathrin;  Dadgar, Armin;  Veit, Peter;  Bläsing, Jürgen;  Krost, Alois 

Metalorganic chemical vapor phase epitaxy and structural properties of Ga1-xPxN on GaN/Si(111) substrates
In: Applied physics . - Berlin : Springer, Bd. 82.2006, 4, S. 733-735; Abstract unter URL: http://springerlink.metapress.com/(0pqw2h45zeix4hfknbe4j2fn)/app/home/contribution.asp?referrer=parent&amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;backto=issue,28,30;journal,9,445;linkingpublicationresults,1:100501,1

Schulz, Fabian;  Dadgar, Armin;  Bläsing, Jürgen;  Diez, Annette;  Krost, Alois 

Metalorganic vapor phase epitaxy grown InGaN/GaN light-emitting diodes on Si(001) substrate
In: Applied physics letters . - Woodbury, NY : Inst., Bd. 88.2006, 12, S. 121114-1-121114-3; Abstract unter URL: http://scitation.aip.org/getabs/servlet/GetabsServlet?prog=normal&amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;id=APPLAB000088000012121114000001&amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;idtype=cvips&amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;gifs=Yes

Riemann, Till;  Hempel, Thomas;  Christen, Jürgen;  Veit, Peter;  Clos, Rainer;  Dadgar, Armin;  Krost, Alois;  Haboeck, U.;  Hoffmann, A. 

Optical and structural microanalysis of GaN grown on SiN submonolayers
In: Journal of applied physics . - [S.l.], Bd. 99.2006, S. 123518-1-123518-8; Abstract unter URL: http://scitation.aip.org/getabs/servlet/GetabsServlet?prog=normal&amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;id=JAPIAU000099000012123518000001&amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;idtype=cvips&amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;gifs=Yes

Zimmermann, T.;  Neuburger, M.;  Benkart, P.;  Hernández-Guillén, F. J.;  Pietzka, C.;  Kunze, M.;  Daumiller, I.;  Dadgar, Armin;  Krost, Alois;  Kohn, E. 

Piezoelectric GaN sensor structures
In: Institute of Electrical and Electronics Engineers : IEEE electron device letters . - New York, NY : IEEE, Bd. 27.2006, 5, S. 309-312; Abstract unter URL: http://ieeexplore.ieee.org/xpl/freeabs_all.jsp?isnumber=34143&amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;arnumber=1626441&amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;count=33&amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;index=0

Fan, Hong Jin;  Lee, Woo;  Hauschild, Robert;  Alexe, Marin;  Le Rhun, Gwenaël;  Scholz, Roland;  Dadgar, Armin;  Nielsch, Kornelius;  Kalt, Heinz;  Krost, Alois;  Zacharias, Margit;  Gösele, Ulrich 

Template-assisted large-scale ordered arrays of ZnO pillars for optical and piezoelectric applications
In: Small . - Weinheim : Wiley-VCH Verl., Bd. 2.2006, 4, S. 561-568; Abstract unter URL: http://www3.interscience.wiley.com/search/allsearch?mode=citation&amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;contextLink=%3Ca+href%3D%22%2Findex.html%22+target%3D%22_top%22%3EHome%3C%2Fa%3E+%2F+%3Ca+href%3D%22%2Fcgi-bin%2Fbrowsebysubject%3Fcode%3DPOLY%22+target%3D%22_top%22%3EPolymers+and+Materials+Science%3C%2Fa%3E+%2F+%3Ca+href%3D%22%2Fcgi-bin%2Fbrowsebycategory%3Fcode%3DMS65%22+target%3D%22_top%22%3ENanotechnology+and+Nanomaterials%3C%2Fa%3E&amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;issn=1613-6829&amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;volume=2&amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;issue=4&amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;pages=561

Fan, Hong Jin;  Fuhrmann, Bodo;  Scholz, Roland;  Himcinschi, Cameliu;  Berger, Andreas;  Leipner, Hartmut;  Dadgar, Armin;  Krost, Alois;  Christiansen, Silke;  Gösele, Ulrich;  Zacharias, Margit 

Vapour-transport-deposition growth of ZnO nanostructures - switch between c-axial wires and a-axial belts by indium doping
In: Nanotechnology . - Bristol : IOP Publ., Bd. 17.2006, S. 231-239; Abstract unter URL: http://www.iop.org/EJ/abstract/0957-4484/17/11/S02

Fan, Hong Jin;  Fuhrmann, Bodo;  Scholz, Roland;  Syrowatka, Frank;  Dadgar, Armin;  Krost, Alois;  Zacharias, Margit 

Well-ordered ZnO nanowire arrays on GaN substrate fabricated via nanosphere lithography
In: Journal of crystal growth - Amsterdam [u.a.]: Elsevier, Bd. 287.2006, 1, S. 34-38; http://www.sciencedirect.com/science?_ob=ArticleURL&amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;_udi=B6TJ6-4HNSJS8-8&amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;_user=1908389&amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;_handle=V-WA-A-W-VA-MsSWYWW-UUA-U-AACZUCUZBB-AACBZBAVBB-ACCYYCYB-VA-U&amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;_fmt=summary&amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;_coverDate=01/18/2006&amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;_rdoc=10&amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;_orig=browse&amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;_srch=#toc#5302#2006#997129998#614528!&amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;_cdi=5302&amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;view=c&amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;_acct=C000052693&amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;_version=1&amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;_urlVersion=0&amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;_userid=1908389&amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;md5=850b4e3cfbb4797985ce790e280c76ec

2005

Begutachteter Zeitschriftenartikel

Fan, H. J.;  Scholz, R.;  Dadgar, A.;  Krost, A.;  Zacharias, M. 

A low-temperature evaporation route for ZnO nanoneedles and nanosaws
In: APPLIED PHYSICS A-MATERIALS SCIENCE {\\&amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;} PROCESSING, Vol. 80, S. 457--460, 2005, 10.1007/s00339-004-3080-5

Fan, Hong Jinnd;  Lee, Woo;  Scholz, Roland;  Dadgar, Armin;  Krost, Alois;  Nielsch, Kornelius;  Zacharias, Margit 

Arrays of vertically aligned and hexagonally arranged ZnO nanowires: a new template-directed approach
In: Nanotechnology, Vol. 16, Issue 6, S. 913--917, ISSN 0957-4484, 2005, 10.1088/0957-4484/16/6/048

Witte, H.;  Krtschil, A.;  Schrenk, E.;  Fluegge, K.;  Dadgar, A.;  Krost, A. 

Correlation between macroscopic transport parameters and microscopic electrical properties in GaN
In: JOURNAL OF APPLIED PHYSICS, Vol. 97, Issue 4, S. -, 2005, 10.1063/1.1854212

Krost, A.;  Dadgar, A.;  Schulze, F.;  Clos, R.;  Haberland, K.;  Zettler, T.;   

Heteroepitaxy of GaN on silicon: In situ measurements
In: SILICON CARBIDE AND RELATED MATERIALS 2004, Vol. 483, S. 1051--1056, 2005

Dadgar, A.;  Neuburger, M.;  Schulze, F.;  Blasing, J.;  Krtschil, A.;  Daumiller, I.;  Kunze, M.;  Gunther, K. M.;  Witte, H.;  Diez, A.;  Kohn, E.;  Krost, A. 

High-current AlInN/GaN field effect transistors
In: PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, Vol. 202, Issue 5, S. 832--836, 2005, 10.1002/pssa.200461466

Krost, A.;  Dadgar, A.;  Schulze, F.;  Blasing, J.;  Strassburger, G.;  Clos, R.;  Diez, A.;  Veit, P.;  Hempel, T.;  Christen, J.;   

In situ monitoring of the stress evolution in growing group-III-nitride layers
In: JOURNAL OF CRYSTAL GROWTH, Vol. 275, Issue 1-2, S. 209--216, 2005, 10.1016/j.jcrysgro.2004.10.090

Li, T.;  Hahn, E.;  Gerthsen, D.;  Rosenauer, A.;  Strittmatter, A.;  Reißmann, L.;  Bimberg, D. 

Indium redistribution in an InGaN quantum well induced by electron-beam irradiation in a transmission electron microscope
In: Applied Physics Letters, Vol. 86, 2005, Issue 24, S. 1-3, 10.1063/1.1948517

Krtschil, A.;  Dadgar, A.;  Oleynik, N.;  Blasing, J.;  Diez, A.;  Krost, A.;   

Local p-type conductivity in zinc oxide dual-doped with nitrogen and arsenic
In: Applied Physics Letters, Vol. 87, Issue 26, S. 262105, ISSN 00036951, 2005, 10.1063/1.2149171

Bertram, F.;  Forster, D.;  Christen, J.;  Oleynik, N.;  Dadgar, A.;  Krost, A.;   

Microscopic spatial distribution of bound excitons in high-quality ZnO
In: SILICON CARBIDE AND RELATED MATERIALS 2004, Vol. 483, S. 1065--1068, 2005

Majid, A.;  Iqbal, M. Z.;  Dadgar, A.;  Bimberg, D. 

Osmium impurity-related deep levels in n-type GaAs
In: JOURNAL OF APPLIED PHYSICS, Vol. 98, Issue 8, S. -, 2005, 10.1063/1.2106010

Steinhoff, G.;  Baur, B.;  Wrobel, G.;  Ingebrandt, S.;  Offenhausser, A.;  Dadgar, A.;  Krost, A.;  Stutzmann, M.;  Eickhoff, M. 

Recording of cell action potentials with AlGaN/GaN field-effect transistors
In: APPLIED PHYSICS LETTERS, Vol. 86, S. -, 2005, 10.1063/1.185331

Krost, A.;  Schulze, F.;  Dadgar, A.;  Strassburger, G.;  Haberland, K.;  Zettler, T.;   

Simultaneous measurement of wafer curvature and true temperature during metalorganic growth of group-III nitrides on silicon and sapphire
In: physica status solidi (b), Vol. 242, Issue 13, S. 2570--2574, ISSN 0370-1972, 2005, 10.1002/pssb.200541088

Kuzmik, J.;  Bychikhin, S.;  Neuburger, M.;  Dadgar, A.;  Krost, A.;  Kohn, E.;  Pogany, D. 

Transient Thermal Characterization of AlGaN/GaN HEMTs Grown on Silicon
In: IEEE Transactions on Electron Devices, Vol. 52, Issue 8, S. 1698--1705, ISSN 0018-9383, 2005, 10.1109/TED.2005.852172

Dadgar, A.;  Krtschil, A.;  Bertram, F.;  Giemsch, S.;  Hempel, T.;  Veit, P.;  Diez, A.;  Oleynik, N.;  Clos, R.;  Christen, J.;  Krost, A. 

ZnO MOVPE growth: From local impurity incorporation towards p-type doping
In: Superlattices and Microstructures, Vol. 38, Issue 4-6, S. 245--255, ISSN 07496036, 2005, 10.1016/j.spmi.2005.08.010

Buchbeitrag

Seguin, R.;  Rodt, S.;  Winkelnkemper, M.;  Schliwa, A.;  Strittmatter, A.;  Reißmann, L.;  Bimberg, D.;  Hahn, E.;  Gerthsen, D. 

Many-particle states in single InGaN/GaN quantum dots grown on Si-substrates
In: AIP Conference Proceedings, Vol. 772, 2005, S. 767-768, 10.1063/1.1994332

Dworzak, M.;  Bartel, T.;  Strassburg, M.;  Hoffmann, A.;  Strittmatter, A.;  Bimberg, D. 

Redistribution of excitons localized in InGaN quantum dot structures
In: AIP Conference Proceedings, Vol. 772, 2005, S. 701-702, 10.1063/1.1994299

Originalartikel in begutachteter internationaler Zeitschrift

Fan, H.J. (ext.);  Lee, Woo (ext.);  Scholz, R. (ext.);  Dadgar, Armin;  Krost, Alois;  Nielsch, Kornelius (ext.);  Zacharias, Margit (ext.) 

Arrays of vertically aligned and hexagonally arranged ZnO nanowires : a new template-directed approach.
In: Nanotechnology [Bristol] 16(2005), S. 913 - 917

Krost, Alois;  Dadgar, Armin;  Schulze, Fabian;  Clos, Rainer;  Haberland, K. (ext.);  Zettler, T. (ext.) 

Heteroepitaxy of GaN on Silicon : in situ measurements.
In: Materials science forum [Aedermannsdorf] 483/485(2005), S. 1051 - 1056 . - [Silicon carbide and related materials, ECSCRM 2004 (5th European conference Bologna, Italy August 31 - September 4, 2004). - proceedings]

Dadgar, Armin;  Neuburger, M. (ext.);  Schulze, Fabian;  Blaesing, Juergen;  Krtschil, Andre;  Daumiller, I. (ext.);  Kunze, M. (ext.);  Guenther, Kay Michael;  Witte, Hartmut;  Diez, Annette;  Kohn, E. (ext.);  Krost, Alois 

High-current AlInN/GaN field effect transistors.
In: Physica status solidi, A = applied research [Berlin] 202(2005), Nr. 5, S. 832 - 836

Krost, Alois;  Dadgar, Armin;  Schulze, Fabian;  Blaesing, Juergen;  Strassburger, Gunther;  Clos, Rainer;  Diez, Annette;  Veit, Peter;  Hempel, Thomas;  Christen, Jürgen 

In situ monitoring of the stress evolution in growing group-III-nitride layers.
In: Journal of crystal growth [Amsterdam] 275(2005), S. 209 - 216

Krtschil, Andre;  Dadgar, Armin;  Oleynik, N. (ext.);  Blaesing, Juergen;  Diez, Annette;  Krost, Alois 

Local p-type condustivity in zinc oxide dual-doped with nitrogen and arsenic.
In: Applied physics letters [Melville, NY] 87(2005), Nr. 26, S. 262105-1 - 262105-3

Bertram, Frank;  Forster, D. (ext.);  Christen, Jürgen;  Oleynik, N. (ext.);  Dadgar, Armin;  Krost, Alois 

Microscopic spatial distribution of bound excitons in high-quality ZnO.
In: Materials science forum [Aedermannsdorf] 483/485(2005), S. 1065 - 1068 . - [Silicon carbide and related materials, ECSCRM 2004 (5th European conference Bologna, Italy August 31 - September 4, 2004). - proceedings]

Steinhoff, Georg (ext.);  Baur, Barbara (ext.);  Wrobel, Guenter (ext.);  Ingebrandt, Sven (ext.);  Offenhaeuser, Andreas (ext.);  Dadgar, Armin;  Krost, Alois;  Stutzmann, Martin (ext.);  Eickhoff, Martin (ext.) 

Recording of cell action potentials with AlGaN/GaN field-effect transistors.
In: Applied physics letters [Melville, NY] 86(2005), Nr. 3, S. 033901-1 - 033901-3

Krost, Alois;  Schulze, Fabian;  Dadgar, Armin;  Strassburger, Gunther;  Haberland, K. (ext.);  Zettler, T. (ext.) 

Simultaneous measurement of wafer curvature and true temperature during metalorganic growth of group-III nitrides on silicon and sapphire.
In: Physica status solidi, B = basic research [Berlin] 242(2005), Nr. 13, S. 2570 - 2574

Kuzmik, Jan (ext.);  Bychikhin, Sergey (ext.);  Neuburger, M. (ext.);  Dadgar, Armin;  Krost, Alois;  Kohn, Erhard (ext.);  Pogany, Dionyz (ext.) 

Transient thermal characterization of AlGaN/GaN HEMTs grown on silicon.
In: IEEE transactins on electron devices [New York, NY] 52(2005), Nr. 8, S. 1698 - 1705

Dadgar, Armin;  Krtschil, Andre;  Bertram, Frank;  Giemsch, Soeren;  Hempel, Thomas;  Veit, Peter;  Diez, Annette;  Oleynik, N. (ext.);  Clos, Rainer;  Christen, Jürgen;  Krost, Alois 

ZnO MOVPE growth : from local impurity incorporation towards p-type doping.
In: Superlattices and microstructures [London] 38(2005), S. 245 - 255

Originalartikel in begutachteter zeitschriftenartiger Reihe

Mueller, E. (ext.);  Livinov, D. (ext.);  Gerthsen, D. (ext.);  Kirchner, C. (ext.);  Waag, A. (ext.);  Oleynik, Nikolay;  Dadgar, Armin;  Krost, Alois 

Properties of dislocations in epitaxial ZnO layers analyzed by transmission electron microscopy.
In: Nickel, Norbert H. (Hrsg.): Zinc oxide : a material for micro- and optoelectronic applications (advanced research workshop St. Petersburg, Russia 23-25 June 2004). - proceedings. Dordrecht : Springer, 2005, S. 99 - 111 (NATO science series 2, 194)

2004

Begutachteter Zeitschriftenartikel

Dadgar, A.;  Oleynik, N.;  Forster, D.;  Deiter, S.;  Witek, H.;  Blasing, J.;  Bertram, F.;  Krtschil, A.;  Diez, A.;  Christen, J.;  Krost, A. 

A two-step metal organic vapor phase epitaxy growth method for high-quality ZnO on GaN/Al2O3 (0001)
In: JOURNAL OF CRYSTAL GROWTH, Vol. 267, S. 140--144, 2004, 10.1016/j.jcrysgro.2004.03.028

Reiher, A.;  Blasing, J.;  Dadgar, A.;  Krost, A. 

Depth-resolving structural analysis of GaN layers by skew angle x-ray diffraction
In: APPLIED PHYSICS LETTERS, Vol. 84, S. 3537--3539, 2004, 10.1063/1.1704870

Bertram, F.;  Forster, D.;  Christen, J.;  Oleynik, N.;  Dadgar, A.;  Krost, A.;   

Direct evidence for selective impurity incorporation at the crystal domain boundaries in epitaxial ZnO layers
In: APPLIED PHYSICS LETTERS, Vol. 85, S. 1976--1978, 2004, 10.1063/1.1791746

Krost, A.;  Dadgar, A.;  Blasing, J.;  Diez, A.;  Hempel, T.;  Petzold, S.;  Christen, J.;  Clos, R.;   

Evolution of stress in GaN heteroepitaxy on AlN/Si(111): From hydrostatic compressive to biaxial tensile
In: APPLIED PHYSICS LETTERS, Vol. 85, S. 3441--3443, 2004, 10.1063/1.1808237

Schulze, F.;  Blasing, J.;  Dadgar, A.;  Krost, A. 

Exact determination of indium incorporation in (InxGa1-xN/GaN,)-multiple quantum well structures by X-ray diffraction and-reflectivity and its impact on optical properties
In: ZEITSCHRIFT FUR KRISTALLOGRAPHIE, Vol. 219, S. 191--194, 2004

Schulze, F.;  Dadgar, A.;  Blasing, J.;  Krost, A. 

GaN heteroepitaxy on Si(001)
In: JOURNAL OF CRYSTAL GROWTH, Vol. 272, S. 496--499, 2004, 10.1016/j.jcrysgro.2004.08.065

Dadgar, A.;  Oleynik, N.;  Blasing, J.;  Deiter, S.;  Forster, D.;  Bertram, F.;  Diez, A.;  Seip, M.;  Greiling, A.;  Christen, J.;  Krost, A. 

Heteroepitaxy and nitrogen doping of high-quality ZnO
In: JOURNAL OF CRYSTAL GROWTH, Vol. 272, S. 800--804, 2004, 10.1016/j.jcrysgro.2004.08.030

Deiter, S.;  Witek, H.;  Oleynik, N.;  Blasing, J.;  Dadgar, A.;  Krost, A.;   

High resolution X-ray diffraction of MOVPE-grown ZnO/GaN/sapphire layers
In: ZEITSCHRIFT FUR KRISTALLOGRAPHIE, Vol. 219, S. 187--190, 2004

Dadgar, A.;  Schulze, F.;  Blasing, J.;  Diez, A.;  Krost, A.;  Neuburger, M.;  Kohn, E.;  Daumiller, I.;  Kunze, M. 

High-sheet-charge-carrier-density AlInN/GaN field-effect transistors on Si(111)
In: APPLIED PHYSICS LETTERS, Vol. 85, S. 5400--5402, 2004, 10.1063/1.1828580

Fehse, K.;  Dadgar, A.;  Krtschil, A.;  Riemann, T.;  Hempel, T.;  Christen, J.;  Krost, A. 

Impact of thermal annealing on the characteristics of InGaN/GaN LEDs on Si(111)
In: JOURNAL OF CRYSTAL GROWTH, Vol. 272, S. 251--256, 2004, 10.1016/j.jcrysgro.2004.08.067

Dadgar, A.;  Schulze, F.;  Zettler, T.;  Haberland, K.;  Clos, R.;  Strassburger, G.;  Blasing, J.;  Diez, A.;  Krost, A. 

In situ measurements of strains and stresses in GaN heteroepitaxy and its impact on growth temperature
In: JOURNAL OF CRYSTAL GROWTH, Vol. 272, Issue 1-4, S. 72--75, 2004, 10.1016/j.jcrysgro.2004.08.031

Schulze, F.;  Dadgar, A.;  Blasing, J.;  Krost, A. 

Influence of buffer layers on metalorganic vapor phase epitaxy grown GaN on Si(001)
In: APPLIED PHYSICS LETTERS, Vol. 84, S. 4747--4749, 2004, 10.1063/1.1760214

Bertram, F.;  Forster, D.;  Christen, J.;  Oleynik, N.;  Dadgar, A.;  Krost, A.;   

Microscopic spatial distribution of bound excitons in high-quality ZnO
In: JOURNAL OF CRYSTAL GROWTH, Vol. 272, S. 785--788, 2004, 10.1016/j.jcrysgro.2004.08.036

Seguin, R.;  Rodt, S.;  Strittmatter, A.;  Reißmann, L.;  Bartel, T.;  Hoffmann, A.;  Bimberg, D.;  Hahn, E.;  Gerthsen, D. 

Multi-excitonic complexes in single InGaN quantum dots
In: Applied Physics Letters, Vol. 84, 2004, Issue 20, S. 4023-4025, 10.1063/1.1751214

Dworzak, M.;  Bartel, T.;  Straßburg, M.;  Krestnikov, I.L.;  Hoffmann, A.;  Seguin, R.;  Rodt, S.;  Strittmatter, A.;  Bimberg, D. 

Optical properties of InGaN quantum dots
In: Superlattices and Microstructures, Vol. 36, 2004, Issue 4-6, S. 763-772, 10.1016/j.spmi.2004.09.045

Krost, A.;  Christen, J.;  Oleynik, N.;  Dadgar, A.;  Deiter, S.;  Blasing, J.;  Krtschil, A.;  Forster, D.;  Bertram, F.;  Diez, A.;   

Ostwald ripening and flattening of epitaxial ZnO layers during in situ annealing in metalorganic vapor phase epitaxy
In: APPLIED PHYSICS LETTERS, Vol. 85, S. 1496--1498, 2004, 10.1063/1.1785871

Zimmermann, T.;  Neuburger, A.;  Kunze, A.;  Daumiller, I.;  Denisenko, A.;  Dadgar, A.;  Krost, A.;  Kohn, E. 

P-channel InGaN-HFET structure based on polarization doping
In: IEEE ELECTRON DEVICE LETTERS, Vol. 25, S. 450--452, 2004, 10.1109/LED.2004.830285

Fan, H. J.;  Fleischer, F.;  Lee, W.;  Nielsch, K.;  Scholz, R.;  Zacharias, M.;  Gosele, U.;  Dadgar, A.;  Krost, A. 

Patterned growth of aligned ZnO nanowire arrays on sapphire and GaN layers
In: SUPERLATTICES AND MICROSTRUCTURES, Vol. 36, S. 95--105, 2004, 10.1016/j.spmi.2004.08.028

Bartel, T.;  Dworzak, M.;  Strassburg, M.;  Hoffmann, A.;  Strittmatter, A.;  Bimberg, D. 

Recombination dynamics of localized excitons in InGaN quantum dots
In: Applied Physics Letters, Vol. 85, 2004, Issue 11, S. 1946-1948, 10.1063/1.1790599

Fan, H. J.;  Bertram, F.;  Dadgar, A.;  Christen, J.;  Krost, A.;  Zacharias, M. 

Self-assembly of ZnO nanowires and the spatial resolved characterization of their luminescence
In: Nanotechnology, Vol. 15, S. 1401--1404, ISSN 0957-4484, 2004, 10.1088/0957-4484/15/11/003

Winzer, A. T.;  Goldhahn, R.;  Gobsch, G.;  Dadgar, A.;  Witte, H.;  Krtschil, A.;  Krost, A. 

Temperature dependence of the built-in electric field strength of AlGaN/GaN heterostructures on Si(111) substrate
In: SUPERLATTICES AND MICROSTRUCTURES, Vol. 36, Issue 4-6, S. 693--700, 2004, 10.1016/j.spmi.2004.09.025

Clos, R.;  Dadgar, A.;  Krost, A. 

Wafer curvature in the nonlinear deformation range
In: PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, Vol. 201, S. R75-R78, 2004, 10.1002/pssa.200409058

Buchbeitrag

Strittmatter, A.;  Reißmann, L.;  Seguin, R.;  Rodt, S.;  Brostowski, A.;  Pohl, U.W.;  Bimberg, D.;  Hahn, E.;  Gerthsen, D. 

Influence of the reactor total pressure on optical properties of MOCVD grown InGaN layers
In: Journal of Crystal Growth, Vol. 272, 2004, Issue 1-4 SPEC. ISS., S. 415-419, 10.1016/j.jcrysgro.2004.08.104

Strittmatter, A.;  Reißmann, L.;  Trepk, T.;  Pohl, U.W.;  Bimberg, D.;  Zettler, J.-T. 

Optimization of GaN MOVPE growth on patterned Si substrates using spectroscopic in situ reflectance
In: Journal of Crystal Growth, Vol. 272, 2004, Issue 1-4 SPEC. ISS., S. 76-80, 10.1016/j.jcrysgro.2004.08.134

Originalartikel in begutachteter internationaler Zeitschrift

Dadgar, Armin;  Oleynik, Nikolay;  Forster, Daniel;  Deiter, Steffi;  Witek, Helvi;  Blaesing, Juergen;  Bertram, Frank;  Krtschil, Andre;  Diez, Annette;  Christen, Jürgen;  Krost, Alois 

A two-step organic vapor phase epitaxy growth method for high-quality ZnO on GaN/Al2O3 (0001).
In: Journal of crystal growth [Amsterdam] 267(2004), S. 140 - 144

Reiher, Antje;  Blaesing, Juergen;  Dadgar, Armin;  Krost, Alois 

Depth-resolving structural analysis of GaN layers by skew angle x-ray diffraction.
In: Applied physics letters [Melville, NY] 84(2004), Nr. 18, S. 3537 - 3539

Bertram, Frank;  Forster, D.;  Christen, Jürgen;  Oleynik, Nikolay;  Dadgar, Armin;  Krost, Alois 

Direct evidence for selective impurity incorporation at the crystal domain boundaries in epitaxial ZnO layers.
In: Applied physics letters [Melville, NY] 85(2004), Nr. 11, S. 1976 - 1978

Krost, Alois;  Dadgar, Armin;  Blaesing, Juergen;  Diez, Annette;  Hempel, Thomas;  Petzold, Silke;  Christen, Jürgen;  Clos, Rainer 

Evolution of stress in GaN heteroepitaxy on AIN/Si(111) : from hydrostatic compressive to biaxial tensile.
In: Applied physics letters [Melville, NY] 85(2004), Nr. 16, S. 3441 - 3443

Schulze, Fabian;  Blaesing, Juergen;  Dadgar, Armin;  Krost, Alois 

Exact determination of indium incorporation in (InxGa1-xN/GaN)-multiple quantum well structures by X-ray diffraction and -reflectivity and its impact on optical properties.
In: Zeitschrift für Kristallographie [München] 219(2004), S. 191 - 194

Schulze, Fabian;  Dadgar, Armin;  Blaesing, Juergen;  Krost, Alois 

GaN heteroepitaxy on Si(0 0 1).
In: Journal of crystal growth [Amsterdam] 272(2004), S. 496 - 499

Dadgar, Armin;  Oleynik, Nikolay;  Blaesing, Juergen;  Deiter, Steffie (ext.);  Forster, D. (ext.);  Bertram, Frank;  Diez, Annette;  Seip, M. (ext.);  Greiling, A. (ext.);  Christen, Jürgen;  Krost, Alois 

Heteroepitaxy and nitrogen doping of high-quality ZnO.
In: Journal of crystal growth [Amsterdam] 272(2004), S. 800 - 804

Deiter, Steffi;  Witek, Helvi;  Oleynik, Nikolay;  Blaesing, Juergen;  Dadgar, Armin;  Krost, Alois 

High resolution X-ray diffraction of MOVPE-grown ZnO/GaN/sapphire layers.
In: Zeitschrift für Kristallographie [München] 219(2004), S. 187 - 190

Dadgar, Armin;  Schulze, Fabian;  Blaesing, Juergen;  Diez, Annette;  Krost, Alois;  Neuburger, M. (ext.);  Kohn, E. (ext.);  Daumiller, I. (ext.);  Kunze, M. (ext.) 

High-sheet-charge-carrier-density AllnN/GaN field-effect transistors on Si(111).
In: Applied physics letters [Melville, NY] 85(2004), Nr. 22, S. 5400 - 5402

Fehse, K.;  Dadgar, Armin;  Krtschil, Andre;  Riemann, Till;  Hempel, Thomas;  Christen, Jürgen;  Krost, Alois 

Impact of thermal annealing on the characteristics of InGaN/GaN LEDs on Si(111).
In: Journal of crystal growth [Amsterdam] 272(2004), S. 251 - 256

Dadgar, Armin;  Schulze, Fabian;  Zettler, T. (ext.);  Haberland, K. (ext.);  Clos, Rainer;  Strassburger, Gunther;  Blaesing, Juergen;  Diez, Annette;  Krost, Alois 

In situ measurements of strains and stresses in GaN heteroepitaxy and its impact on growth temperature.
In: Journal of crystal growth [Amsterdam] 272(2004), S. 72 - 75

Schulze, F.;  Dadgar, Armin;  Blaesing, Juergen;  Krost, Alois 

Influence of buffer layers on metalorganic vapor phase epitaxy grown GaN on Si(001).
In: Applied physics letters [Melville, NY] 84(2004), Nr. 23, S. 4747 - 4749

Bertram, Frank;  Forster, D. (ext.);  Christen, Jürgen;  Oleynik, Nikolay;  Dadgar, Armin;  Krost, Alois 

Microscopic spatial distribution of bound excitons in high-quality ZnO.
In: Journal of crystal growth [Amsterdam] 272(2004), S. 785 - 788

Krost, Alois;  Christen, Jürgen;  Oleynik, Nikolay;  Dadgar, Armin;  Deiter, Steffie;  Blaesing, Juergen;  Krtschil, Andre;  Forster, D.;  Bertram, Frank;  Diez, Annette 

Ostwald ripening and flattening of epitaxial ZnO Layers during in situ annealing in metalorganic vapor phase epitaxy.
In: Applied physics letters [Melville, NY] 85(2004), Nr. 9, S. 1496 - 1498

Zimmermann, T. (ext.);  Neuburger, M. (ext.);  Kunze, M. (ext.);  Daumiller, I. (ext.);  Denisenko, A. (ext.);  Dadgar, Armin;  Krost, Alois;  Kohn, E. (ext.) 

P-channel InGaN-HFET structure based on polarization doping.
In: IEEE electron device letters [New York, NY] 25(2004), Nr. 7, S. 450 - 452

Fan, H.J. (ext.);  Fleischer, F. (ext.);  Lee, W. (ext.);  Nielsch, K. (ext.);  Scholz, R. (ext.);  Zacharias, M. (ext.);  Goesele, U. (ext.);  Dadgar, Armin;  Krost, Alois 

Patterned growth of aligned ZnO nanowire arrays on sapphire and GaN layers.
In: Superlattices and microstructures [London] 36(2004), S. 95 - 105

Fan, H.J. (ext.);  Bertram, Frank;  Dadgar, Armin;  Christen, Jürgen;  Krost, Alois;  Zacharias, M. (ext.) 

Self-assembly of ZnO nanowires and the spatial resolved characterization of their luminescence.
In: Nanotechnology [Bristol] 15(2004), S. 1401 - 1404

Dadgar, Armin;  Clos, Rainer;  Strassburger, Gunther;  Schulze, F.;  Veit, Peter;  Hempel, Thomas;  Blaesing, Juergen;  Krtschil, Andre;  Daumiller, I. (ext.);  Kunze, M. (ext.);  Kaluza, A. (ext.);  Kamp, M. (ext.);  Diez, Annette;  Christen, Jürgen;  Krost, Alois 

Strains and stresses in GaN heteroepitaxy - sources and control.
In: Advances in solid state physics [Berlin] 44(2004), S. 313 - 325

Winzer, A.T. (ext.);  Goldhahn, R. (ext.);  Gobsch, G. (ext.);  Dadgar, Armin;  Witte, Hartmut;  Krtschil, Andre;  Krost, Alois 

Temperature dependence of the built-in electric field strength of AlGaN/GaN heterostructures on Si(111) substrate.
In: Superlattices and microstructures [London] 36(2004), S. 693 - 700

Neubauer, M. (ext.);  Zimmermann, T. (ext.);  Kohn, E. (ext.);  Dadgar, Armin;  Schulze, Fabian;  Krtschil, Andre;  Guenther, M.;  Witte, Hartmut;  Blaesing, Juergen;  Krost, Alois;  Daumiller, I. (ext.);  Kunze, M. (ext.) 

Unstrained InAIN/GaN hemt structure.
In: International journal of high speed electronics and systems [Singapore] 14(2004), Nr. 3, S. 785 - 790

Clos, Rainer;  Dadgar, Armin;  Krost, Alois 

Wafer curvature in the nonlinear deformation range.
In: Physica status solidi, A = applied research [Berlin] 201(2004), Nr. 11, S. R75 - R78

Originalartikel in begutachteter zeitschriftenartiger Reihe

Witte, Hartmut;  Fluegge, K. (ext.);  Dadgar, Armin;  Krtschil, Andre;  Krost, Alois;  Christen, Jürgen 

Deep defects in Fe-doped GaN layers analysed by electrical and photoelectrical spectroscopic methods.
In: Ng, Hock Min (Hrsg.) ; ... (Hrsg): GaN and related alloys : 2003 (Symposium Boston, USA December 1 - 5, 2003). Warrendale, Pa. : Materials Research Society, 2004, S. Y.5.37.1 - Y.5.37.6 (Materials Research Society symposium proceedings 798)

2003

Begutachteter Zeitschriftenartikel

Liu, R.;  Ponce, F. A.;  Dadgar, A.;  Krost, A. 

Atomic arrangement at the AlN/Si(111) interface
In: APPLIED PHYSICS LETTERS, Vol. 83, Issue 5, S. 860--862, 2003, 10.1063/1.1597749

Majid, A.;  Iqbal, M. Z.;  Khan, S. H.;  Ali, A.;  Zafar, N.;  Dadgar, A.;  Bimberg, D. 

Characteristics of deep levels associated with rhodium impurity in n-type GaAs
In: JOURNAL OF APPLIED PHYSICS, Vol. 94, Issue 5, S. 3115--3120, 2003, 10.1063/1.1600530

Krtschil, A.;  Dadgar, A.;  Krost, A. 

Decoration effects as origin of dislocation-related charges in gallium nitride layers investigated by scanning surface potential microscopy
In: APPLIED PHYSICS LETTERS, Vol. 82, Issue 14, S. 2263--2265, 2003, 10.1063/1.1565687

Majid, A.;  Iqbal, M. Z.;  Dadgar, A.;  Bimberg, D. 

Deep levels in rhodium-doped p-type MOCVD GaAs
In: PHYSICA B-CONDENSED MATTER, Vol. 340, S. 362--366, 2003, 10.1016/j.physb.2003.09.074

Reiher, A.;  Blasing, J.;  Dadgar, A.;  Diez, A.;  Krost, A. 

Efficient stress relief in GaN heteroepitaxy on Si(111) using low-temperature AlN interlayers
In: JOURNAL OF CRYSTAL GROWTH, Vol. 248, S. 563--567, 2003

Krtschil, A.;  Dadgar, A.;  Krost, A. 

Electrical microcharacterization of dislocation-related charges in GaN-based single layers by scanning probe microscopy techniques
In: JOURNAL OF CRYSTAL GROWTH, Vol. 248, S. 542--547, 2003

Krost, A.;  Dadgar, A.;  Strassburger, G.;  Clos, R.;   

GaN-based epitaxy on silicon: stress measurements
In: PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, Vol. 200, Issue 1, S. 26--35, 2003, 10.1002/pssa.200303428

Dadgar, A.;  Poschenrieder, M.;  Blasing, J.;  Contreras, O.;  Bertram, F.;  Riemann, T.;  Reiher, A.;  Kunze, M.;  Daumiller, I.;  Krtschil, A.;  Diez, A.;  Kaluza, A.;  Modlich, A.;  Kamp, M.;  Christen, J.;  Ponce, F. A.;  Kohn, E.;  Krost, A. 

MOVPE growth of GaN on Si(111) substrates
In: JOURNAL OF CRYSTAL GROWTH, Vol. 248, S. 556--562, 2003

Oleynik, N.;  Dadgar, A.;  Blasing, J.;  Adam, M.;  Krtschil, A.;  Forster, D.;  Bertram, F.;  Diez, A.;  Seip, M.;  Greiling, A.;  Christen, J.;  Krost, A. 

Metal organic vapor phase epitaxy of ZnO on GaN/Si(111) using tertiary-butanol as O-precursor
In: JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES {\\&amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;} REVIEW PAPERS, Vol. 42, Issue 12, S. 7474--7477, 2003, 10.1143/JJAP.42.7474

Oleynik, N.;  Adam, M.;  Krtschil, A.;  Blasing, J.;  Dadgar, A.;  Bertram, F.;  Forster, D.;  Diez, A.;  Greiling, A.;  Seip, M.;  Christen, J.;  Krost, A. 

Metalorganic chemical vapor phase deposition of ZnO with different O-precursors
In: JOURNAL OF CRYSTAL GROWTH, Vol. 248, S. 14--19, 2003

Iqbal, M. Z.;  Majid, A.;  Dadgar, A.;  Bimberg, D. 

Osmium related deep levels in n-type GaAs
In: PHYSICA B-CONDENSED MATTER, Vol. 340, S. 358--361, 2003, 10.1016/j.physb.2003.09.073

Dadgar, A.;  Poschenrieder, M.;  Reiher, A.;  Blasing, J.;  Christen, J.;  Krtschil, A.;  Finger, T.;  Hempel, T.;  Diez, A.;  Krost, A.;   

Reduction of stress at the initial stages of GaN growth on Si(111)
In: APPLIED PHYSICS LETTERS, Vol. 82, Issue 1, S. 28--30, 2003, 10.1063/1.1534940

Neuburger, M.;  Daumiller, I.;  Zimmermann, T.;  Kunze, M.;  Koley, G.;  Spencer, M. G.;  Dadgar, A.;  Krtschil, A.;  Krost, A.;  Kohn, E. 

Surface stability of InGaN-channel based HFETs
In: ELECTRONICS LETTERS, Vol. 39, Issue 22, S. 1614--1616, 2003, 10.1049/el:20030974

Schulze, F.;  Blasing, J.;  Dadgar, A.;  Krost, A. 

Time-delayed indium incorporation in ultrathin (InxGa1-xN/GaN) multiple quantum wells grown by metalorganic vapor phase epitaxy
In: APPLIED PHYSICS LETTERS, Vol. 82, Issue 25, S. 4558--4560, 2003, 10.1063/1.1586472

Originalartikel in begutachteter internationaler Zeitschrift

Liu, R. (ext.);  Ponce, F.A. (ext.);  Dadgar, Armin;  Krost, Alois 

Atomic arragement at the AIN/SI (111) interface.
In: Applied physics letters [Melville, NY] 83(2003), Nr. 5, S. 860 - 862

Krtschil, Andre;  Dadgar, Armin;  Krost, Alois 

Decoration effects as origin of dislocation-related charges in gallium nitride layers investigated by scanning surface potential microscopy.
In: Applied physics letters [Melville, NY] 82(2003), Nr. 14, S. 2263 - 2265

Krestnikov, Igor L. (ext.);  Strassburg, Martin (ext.);  Strittmatter, Andre (ext.);  Ledentsov, Nicolai N. (ext.);  Christen, Jürgen;  Hoffmann, Axel (ext.);  Bimberg, Dieter (ext.) 

Direct evidence of nanoscale carrier localization in InGaN/GaN structures grown on Si substrates.
In: Japanese journal of applied physics : JJAP, Part 2 = Letters [Tokyo] 42(2003), Nr. 9 A/B, S. L1057 - L1060

Reiher, Antje;  Blaesing, Juergen;  Dadgar, Armin;  Diez, Annette;  Krost, Alois 

Efficient stress relief in GaN heteroepitaxy on Si(111) using low-temperature AIN interlayers.
In: Journal of crystal growth [Amsterdam] 248(2003), S. 563 - 567

Krtschil, Andre;  Dadgar, Armin;  Krost, Alois 

Electrical microcharacterization of dislocation-related charges in GaN-based single layers by scanning probe microscopy techniques.
In: Journal of crystal growth [Amsterdam] 248(2003), S. 542 - 547

Krost, Alois;  Dadgar, Armin;  Strassburger, Gunther;  Clos, Rainer 

GaN-based epitaxy on silicon: stress measurements.
In: Physica status solidi, A = applied research [Berlin] 200(2003), Nr. 1, S. 26 - 35

Dadgar, Armin;  Poschenrieder, Margarethe;  Riemann, Till;  Bertram, Frank;  Blaesing, Juergen;  Schulze, F. (ext.);  Reiher, Antje;  Krtschil, Andre;  Diez, Annette;  Christen, Jürgen;  ..., (ext.);  Krost, Alois;  ;   

Gallium-nitride-based devices on silicon.
In: Physica status solidi, c = conferences [Berlin] 0(2003), Nr. 6, S. 1940 - 1949

Dadgar, Armin;  Poschenrieder, Margarethe;  Blaesing, Juergen;  Contreras, O. (ext.);  Bertram, Frank;  Riemann, Till;  Reiher, Antje;  Kunze, M. (ext.);  Daumiller, I. (ext.);  Krtschil, Andre;  Diez, Annette;  Christen, Jürgen;  Krost, Alois;  ;   

MOVPE growth of GaN on Si(111) substrates.
In: Journal of crystal growth [Amsterdam] 248(2003), S. 556 - 562

Oleynik, Nikolay;  Dadgar, Armin;  Blaesing, Juergen;  Adam, Andr;  Krtschil,;  Forster, Daniel;  Bertram, Frank;  Diez, Annette;  Seip, Markus (ext.);  Greiling, Arnd (ext.);  Christen, Jürgen;  Krost, Alois 

Metal organic vapor phase epitaxy of ZnO on GaN/Si(111) using tertiary-Butanol as O-Precursor.
In: Japanese journal of applied physics : JJAP [Tokyo] 42(2003), Nr. 12, S. 7474 - 7477

Oleynik, T.;  Adam, M.;  Krtschil, Andre;  Blaesing, Juergen;  Dadgar, Armin;  Bertram, Frank;  Forster, D.;  Diez, Annette;  Greiling, A. (ext.);  Seip, M. (ext.);  Christen, Jürgen;  Krost, Alois 

Metalorganic chemical vapor phase deposition of ZnO with different O-precursors.
In: Journal of crystal growth [Amsterdam] 248(2003), S. 14 - 19

Dadgar, Armin;  Strittmatter, A. (ext.);  Blaesing, Juergen;  Poschenrieder, Margarethe;  Contreras, O. (ext.);  Veit, Peter;  Riemann, Till;  Bertram, Frank;  Reiher, Antje;  Krtschil, Andre;  Diez, Annette;  Hempel, Thomas;  Finger, T.;  Christen, Jürgen;  Krost, Alois;   

Metalorganic chemical vapor phase epitaxy of gallium-nitride on silicon.
In: Physica status solidi, c = conferences [Berlin] 0(2003), Nr. 6, S. 1583 - 1606

Neuburger, Martin (ext.);  Daumiller, I. (ext.);  Zimmermann, T. (ext.);  Kunze, M. (ext.);  Koley, G. (ext.);  Spencer, M. (ext.);  Dadgar, Armin;  Krtschil, Andre;  Krost, Alois;  Kohn, E. (ext.) 

On the surface stability of InGaN-channel based HFETs.
In: Electronics letters [London] 39(2003), Nr. 22, S. 1614 - 1616

Kasic, A. (ext.);  Dadgar, Armin;  Krost, Alois;  ..., (ext.);   

Phonons and free-carrier properties of binary, ternary, and quaternary group-III nitride layers measured by infrared spectroscopic ellipsometry.
In: Physica status solidi, c = conferences [Berlin] 0(2003), Nr. 6, S. 1750 - 1769

Dadgar, Armin;  Poschenrieder, Margarethe;  Reiher, Antje;  Blaesing, Juergen;  Christen, Jürgen;  Krtschil, Andre;  Finger, T.;  Hempel, Thomas;  Diez, Annette;  Krost, Alois 

Reduction of stress at the initial stages of GaN growth on Si(111).
In: Applied physics letters [Melville, NY] 82(2003), Nr. 1, S. 28 - 30

Schulze, F. (ext.);  Blaesing, Juergen;  Dadgar, Armin;  Krost, Alois 

Time-delayed indium incorporation in ultrathin (InxGa1-xN/GaN) multiple quantum wells grown by metalorganic vapor phase epitaxy.
In: Applied physics letters [Melville, NY] 82(2003), Nr. 25, S. 4558 - 4560

2002

Begutachteter Zeitschriftenartikel

Krost, A.;  Dadgar, A. 

Blue optoelectronics in III-V nitrides on silicon
In: ACTA PHYSICA POLONICA A, Vol. 102, Issue 4-5, S. 555--566, 2002

Poschenrieder, M.;  Schulze, F.;  Blasing, J.;  Dadgar, A.;  Diez, A.;  Christen, J.;  Krost, A. 

Bright blue to orange photoluminescence emission from high-quality InGaN/GaN multiple-quantum-wells on Si(111) substrates
In: APPLIED PHYSICS LETTERS, Vol. 81, Issue 9, S. 1591--1593, 2002, 10.1063/1.1502909

Dadgar, A.;  Poschenrieder, M.;  Contreras, O.;  Christen, J.;  Fehse, K.;  Blasing, J.;  Diez, A.;  Schulze, F.;  Riemann, T.;  Ponce, F. A.;  Krost, A. 

Bright, crack-free InGaN/GaN light emitters on Si(111)
In: PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, Vol. 192, Issue 2, S. 308--313, 2002

Contreras, O.;  Ponce, F. A.;  Christen, J.;  Dadgar, A.;  Krost, A. 

Dislocation annihilation by silicon delta-doping in GaN epitaxy on Si
In: APPLIED PHYSICS LETTERS, Vol. 81, Issue 25, S. 4712--4714, 2002, 10.1063/1.1529309

Krost, A.;  Dadgar, A. 

GaN-based devices on Si
In: PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, Vol. 194, Issue 2, S. 361--375, 2002

Krost, A.;  Dadgar, A. 

GaN-based optoelectronics on silicon substrates
In: MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, Vol. 93, Issue 1-3, S. 77--84, 2002

Oleynik, N.;  Dadgar, A.;  Christen, J.;  Blasing, J.;  Adam, M.;  Riemann, T.;  Diez, A.;  Greiling, A.;  Seip, M. 

Growth of ZnO layers by metal organic chemical vapor phase epitaxy
In: PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, Vol. 192, Issue 1, S. 189--194, 2002

Blasing, J.;  Reiher, A.;  Dadgar, A.;  Diez, A.;  Krost, A. 

The origin of stress reduction by low-temperature AlN interlayers
In: APPLIED PHYSICS LETTERS, Vol. 81, Issue 15, S. 2722--2724, 2002, 10.1063/1.1512331

Dadgar, A.;  Poschenrieder, M.;  Blasing, J.;  Fehse, K.;  Diez, A.;  Krost, A.;   

Thick, crack-free blue light-emitting diodes on Si(111) using low-temperature AlN interlayers and in situ SixNy masking
In: APPLIED PHYSICS LETTERS, Vol. 80, Issue 20, S. 3670--3672, 2002, 10.1063/1.1479455

Buchbeitrag

Dadgar, Arminnd;  Krost, Alois 

MOVPE growth of GaN on Si
In: 2002

Dadgar, Armin;  Krost, Alois 

MOVPE growth of GaN on Si.
In: Paskova, Tanya (Hrsg.) ; Monemar, Bo (Hrsg.): Vacuum science and technology : nitrides as seen by the technology. Linkoping : Research Signpost, 2002, S. 197 - 241

Originalartikel in begutachteter internationaler Zeitschrift

Poschenrieder, Margarethe;  Schulze, F.;  Blaesing, Juergen;  Dadgar, Armin;  Diez, Annette;  Christen, Jürgen;  Krost, Alois 

Bright blue to orange photoluminescence emission from high-quality InGaN/GaN multiple-quantum- wells on Si(111) substrates.
In: Applied physics letters [Melville, NY] 81(2002), Nr. 9, S. 1591 - 1593

Dadgar, Armin;  Poschenrieder, Margarethe;  Contreras, O. (ext.);  Christen, Jürgen;  Fehse, K.;  Blaesing, Juergen;  Diez, Annette;  Schulze, F.;  Riemann, Till;  Ponce, F.A. (ext.);  Krost, Alois 

Bright, crack-free InGaN/GaN light emitters on Si(111).
In: Physica status solidi, A = applied research [Berlin] 192(2002), Nr. 2, S. 308 - 313

Contreras, O. (ext.);  Ponce, F.A. (ext.);  Christen, Jürgen;  Dadgar, Armin;  Krost, Alois 

Dislocation annihilation by silicon delta-doping in GaN epitaxy on Si.
In: Applied physics letters [Melville, NY] 81(2002), Nr. 25, S. 4712 - 4714

Krost, Alois;  Dadgar, Armin 

GaN-based devices on Si.
In: Physica status solidi, A = applied research [Berlin] 194(2002), Nr. 2, S. 361 - 375

Krost, Alois;  Dadgar, Armin 

GaN-based optoelectronics on silicon substrates.
In: Materials science &amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;amp; engineering, B = Solid state materials for advanced technology [Amsterdam] 93(2002), S. 77 - 84

Oleynik, T.;  Dadgar, Armin;  Christen, Jürgen;  Blaesing, Juergen;  Adam, M.;  Riemann, Till;  Diez, Annette;  Krost, Alois;   

Growth of ZnO layers by metal organic chemical vapor phase epitaxy.
In: Physica status solidi, A = applied research [Berlin] 192(2002), Nr. 1, S. 189 - 194

Strittmatter, A. (ext.);  Reissmann, L. (ext.);  Bimberg, D. (ext.);  Veit, Peter;  Krost, Alois 

Spontaneous superlattice formation in AlGaN layers grown by MOCVD on Si(111)-substrates.
In: Physica status solidi, B = basic research [Berlin] 234(2002), Nr. 3, S. 722 - 725

Blaesing, Juergen;  Reiher, Antje;  Dadgar, Armin;  Diez, Annette;  Krost, Alois 

The orign of stress reduction by low-temperature AIN interlayers.
In: Applied physics letters [Melville, NY] 81(2002), Nr. 15, S. 2722 - 2724

Dadgar, Armin;  Krost, Alois;  ..., (ext.);   

The role of charge dipoles in GaN HFET design.
In: Physica status solidi, c = conferences [Weinheim] 0(2002), Nr. 1, S. 86 - 89

Dadgar, Armin;  Poschenrieder, Margarethe;  Blaesing, Juergen;  Fehse, K.;  Diez, Annette;  Krost, Alois 

Thick, crack-free blue light-emitting diodes on Si(111) using low-temperature AIN interlayers and in situ SixNy masking.
In: Applied physics letters [Melville, NY] 80(2002), Nr. 20, S. 3670 - 3672

Krost, Alois;  Dadgar, Armin 

blue optoelectronics in III-V nitrides on silicon.
In: Acta physica Polonica, A = General physics, physics of condensend matter, optics and quantum electronics, atomic and molecular physics, applied physics [Warszawa] 102(2002), Nr. 4/5, S. 555 - 566

Originalartikel in begutachteter nationaler Zeitschrift

Krost, Alois;  Dadgar, Armin 

Optoelektronik auf Silizium : eine Herausforderung für die Halbleiterphysik.
In: Magdeburger Wissenschaftsjournal [Magdeburg] 7(2002), Nr. 1, S. 3 - 10

Originalartikel in begutachteter zeitschriftenartiger Reihe

Dadgar, Armin;  Poschenrieder, Margarethe;  Blaesing, Juergen;  Contreras, O. (ext.);  Bertram, Frank;  Riemann, Till;  Reiher, Antje;  Kunze, M. (ext.);  Daumiller, I. (ext.);  Krtschil, Andre;  Diez, Annette;  Kaluza, A. (ext.);  Christen, Jürgen;  Ponce, F.A. (ext.);  Kohn, E. (ext.);  Krost, Alois;   

Bright future for GaN-ON-silicon.
In: Chang, P. C. (Hrsg.) ; Buckley, D. N. (Hrsg.) ; ... (Hrsg.): Compound semiconductors XXXVII (SOTAPOCS XXXVII) and Narrow bandgap optoelectronic materials and devices (held at the 202nd meeting of the Electrochemical Society Salt Lake City, October 20-25, 2002). - state-of-the-art-programme. Pennington, NJ : Electrochemical Society, 2002, S. 300 - 310 (Proceedings volume // Electrochemical Society 2002-14)

Krost, Alois;  Dadgar, Armin 

Heteroepitaxy of GaN on Si(111).
In: Breza, J. (Hrsg.) ; ... (Hrsg.): Semiconducting &amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;amp; insulating materials (12th International conference Smolenice Castle, Slovakia June 30 - July 5, 2002). - proceedings. Piscataway, NJ : IEEE Operation Center, 2002, S. 41 - 47 (SIMC-XII-2002)

2001

Begutachteter Zeitschriftenartikel

Dadgar, A.;  Christen, J.;  Riemann, T.;  Richter, S.;  Blasing, J.;  Diez, A.;  Krost, A.;  Alam, A.;  Heuken, M. 

Bright blue electroluminescence from an InGaN/GaN multiquantum-well diode on Si(111): Impact of an AlGaN/GaN multilayer
In: APPLIED PHYSICS LETTERS, Vol. 78, Issue 15, S. 2211--2213, 2001

Dadgar, A.;  Alam, A.;  Riemann, T.;  Blasing, J.;  Diez, A.;  Poschenrieder, M.;  Strassburg, M.;  Heuken, M.;  Christen, J.;  Krost, A.;   

Crack-free InGaN/GaN light emitters on Si(111)
In: PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, Vol. 188, Issue 1, S. 155--158, 2001

Soderstrom, D.;  Lourdudoss, S.;  Dadgar, A.;  Stenzel, O.;  Bimberg, D.;  Schumann, H. 

Dopant diffusion and current-voltage studies on epitaxial InP codoped with Ru and Fe
In: JOURNAL OF ELECTRONIC MATERIALS, Vol. 30, Issue 8, S. 972--976, 2001

Soderstrom, D.;  Lourdudoss, S.;  Wallnas, M.;  Dadgar, A.;  Stenzel, O.;  Bimberg, D.;  Schumann, H. 

Electrical characterization of ruthenium-doped InP grown by low pressure hydride vapor phase epitaxy
In: ELECTROCHEMICAL AND SOLID STATE LETTERS, Vol. 4, Issue 6, S. G53-G55, 2001

Strittmatter, A.;  Rodt, S.;  Reißmann, L.;  Bimberg, D.;  Schröder, H.;  Obermeier, E.;  Riemann, T.;  Christen, J.;  Krost, A. 

Maskless epitaxial lateral overgrowth of GaN layers on structured Si(111) substrates
In: Applied Physics Letters, Vol. 78, 2001, Issue 6, S. 727-729, 10.1063/1.1347013

Iqbal, M. Z.;  Majid, A.;  Khan, S. H.;  Ali, A.;  Zafar, N.;  Dadgar, A.;  Bimberg, D. 

Rhodium-related deep levels in n-type MOCVD GaAs
In: PHYSICA B-CONDENSED MATTER, Vol. 308, S. 816--819, 2001

Soderstrom, D.;  Lourdudoss, S.;  Wallnas, M.;  Dadgar, A.;  Stenzel, O.;  Bimberg, D.;  Schumann, H. 

Studies on ruthenium-doped InP growth by low-pressure hydride vapor-phase epitaxy
In: JOURNAL OF THE ELECTROCHEMICAL SOCIETY, Vol. 148, Issue 7, S. G375-G378, 2001, 10.1149/1-1374220

Originalartikel in begutachteter internationaler Zeitschrift

Dadgar, Armin;  Christen, Jürgen;  Riemann, Till;  Richter, Steffen;  Blaesing, Juergen;  Diez, Annette;  Krost, Alois;  Alam, A. (ext.);  Heuken, M. (ext.) 

Bright blue electroluminescence from an InGaN/GaN multiquantum-well diode on Si(111) : impact of an AlGaN/GaN multilayer.
In: Applied physics letters [Melville, NY] 78(2001), Nr. 15, S. 2211 - 2213

Dadgar, Armin;  Alam, A. (ext.);  Riemann, Till;  Blaesing, Juergen;  Diez, Annette;  Poschenrieder, Margarethe;  Strassburg, M. (ext.);  Heuken, M. (ext.);  Christen, Jürgen;  Krost, Alois 

Crack-free InGaN/GaN light emitters on Si(111).
In: Physica status solidi, A = applied research [Berlin] 188(2001), Nr. 1, S. 155 - 158

Strittmatter, A. (ext.);  Riemann, Till;  Christen, Jürgen;  Krost, Alois;   

Maskless epitaxial lateral overgrowth of GaN layers on structures Si(111) substrates.
In: Applied physics letters [Melville, NY] 78(2001), Nr. 6, 727 - 729

2000

Begutachteter Zeitschriftenartikel

Tsatsul'nikov, A.F.;  Krestnikov, I.L.;  Lundin, W.V.;  Sakharov, A.V.;  Kartashova, A.P.;  Usikov, A.S.;  Alferov, Zh.I.;  Ledentsov, N.N.;  Strittmatter, A.;  Hoffmann, A.;  Bimberg, D.;  Soshnikov, I.P.;  Litvinov, D.;  Rosenauer, A.;  Gerthsen, D.;  Plaut, A. 

Formation of GaAsN nanoinsertions in a GaN matrix by metal-organic chemical vapour deposition
In: Semiconductor Science and Technology, Vol. 15, 2000, Issue 7, S. 766-769, 10.1088/0268-1242/15/7/318

Dadgar, A.;  Blasing, J.;  Diez, A.;  Alam, A.;  Heuken, M.;  Krost, A.;   

Metalorganic chemical vapor phase epitaxy of crack-free GaN on Si (111) exceeding 1 mu m in thickness
In: JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, Vol. 39, Issue 11B, S. L1183-L1185, 2000

Buchbeitrag

Dadgar, Armin;  Christen, Jürgen;  Richter, Steffen;  Bertram, Frank;  Diez, Annette;  Krost, Alois;  Strittmatter, A. (ext.) 

InGaN/GaN blue light emitter grown on Si(111) using an AlAs seed layer.
In: Nitride semiconductors (International workshop Nagoya November 30, 2000). - proceedings. Tokyo : IPAP, 2000, S. 845 - 848 (IPAP conference series 1)

Originalartikel in begutachteter internationaler Zeitschrift

Dadgar, Armin;  Blaesing, Juergen;  Diez, Annette;  Alam, A. (ext.);  Heuken, Michael (ext.);  Krost, Alois 

Metalorganic chemical vapor phase epitaxy of crack-free GaN on Si (111) exceeding 1æm in thickness.
In: Japanese journal of applied physics : JJAP, Part 2 = Letters [Tokyo] 39(2000), Nr. 11B, S. L1183 - L1185

Strittmatter, A. (ext.);  Bimberg, Dieter (ext.);  Krost, Alois;  Blaesing, Juergen;  Veit, Peter 

Structural investigation of GaN layers grown on Si(111) substrates using a nitridated AlAs buffer layer.
In: Journal of crystal growth [Amsterdam] 221(2000), S. 293 - 296

1999

Begutachteter Zeitschriftenartikel

Kollakowski, St.;  Strittmatter, A.;  Dröge, E.;  Böttcher, E.H.;  Bimberg, D.;  Reimann, O.;  Janiak, K. 

65 GHz InGaAs/InAlGaAs/InP waveguide-integrated photodetectors for the 1.3-1.55 μm wavelength regime
In: Applied Physics Letters, Vol. 74, 1999, Issue 4, S. 612-614

Iqbal, M. Z.;  Qurashi, U. S.;  Majid, A.;  Khan, A.;  Zafar, N.;  Dadgar, A.;  Bimberg, D. 

Deep levels associated with alpha irradiation of n-type MOCVD InP
In: PHYSICA B-CONDENSED MATTER, Vol. 273-4, S. 839--842, 1999

Strittmatter, A.;  Krost, A.;  Bläsing, J.;  Bimberg, D. 

High quality GaN layers grown by metalorganic chemical vapor deposition on Si(111) substrates
In: Physica Status Solidi (A) Applied Research, Vol. 176, 1999, Issue 1, S. 611-614, 10.1002/(SICI)1521-396X(199911)176:1<611::AID-PSSA611>3.0.CO;2-1

Strittmatter, A.;  Krost, A.;  Tuerck, V.;  Strassburg, M.;  Bimberg, D.;  Blaesing, J.;  Hempel, T.;  Christen, J.;  Neubauer, B.;  Gerthsen, D.;  Christmann, T.;  Meyer, B.K. 

LP-MOCVD growth of GaN on silicon substrates - comparison between AlAs and ZnO nucleation layers
In: Materials Science and Engineering B: Solid-State Materials for Advanced Technology, Vol. 59, 1999, Issue 1-3, S. 29-32, 10.1016/S0921-5107(98)00411-5

Strittmatter, A.;  Krost, A.;  Straßburg, M.;  Türck, V.;  Bimberg, D.;  Bläsing, J.;  Christen, J. 

Low-pressure metal organic chemical vapor deposition of GaN on silicon(111) substrates using an AlAs nucleation layer
In: Applied Physics Letters, Vol. 74, 1999, Issue 9, S. 1242-1244

Kohne, L.;  Dadgar, A.;  Bimberg, D.;  Iqbal, M. Z.;  Qurashi, U. S.;  Grundemann, T.;  Schumann, H. 

Osmium related deep levels in indium phosphide
In: PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, Vol. 171, Issue 2, S. 521--537, 1999

Umbach, A.;  Engel, T.;  Bach, H.-G.;  Van Waasen, S.;  Dröge, E.;  Strittmatter, A.;  Ebert, W.;  Passenberg, W.;  Steingrüber, R.;  Schlaak, W.;  Mekonnen, G.G.;  Unterbörsch, G.;  Bimberg, D. 

Technology of InP-based 1.55-μm ultrafast OEMMIC's: 40-Gbit/s broad-band and 38/60-GHz narrow-band photoreceivers
In: IEEE Journal of Quantum Electronics, Vol. 35, 1999, Issue 7, S. 1024-1031, 10.1109/3.772171

Herausgeberschaft

Boettcher, E.H.;  Pfitzenmaier, H.;  Droege, E.;  Kollakowski, St.;  Strittmatter, A.;  Bimberg, D.;  Steingrueber, R. 

Distributed waveguide-integrated InGaAs MSM photodetectors for high-efficiency and ultra-wideband operation
In: Conference Proceedings - International Conference on Indium Phosphide and Related Materials, 1999, S. 79-82

Dadgar, Armin 

MOCVD-Wachstum und elektrische Eigenschaften von Eisen und Platinmetallen im Indiumphosphid: Ruthenium, ein thermisch stabiler Kompensator im Indiumphosphid
In: 1999

1998

Begutachteter Zeitschriftenartikel

Droge, E.;  Böttcher, E.H.;  Kollakowski, St.;  Strittmatter, A.;  Bimberg, D.;  Reimann, O.;  Steingrüber, R. 

78GHz distributed InGaAs MSM photodetector
In: Electronics Letters, Vol. 34, 1998, Issue 23, S. 2241-2243

Kollakowski, St.;  Lemm, Ch.;  Strittmatter, A.;  Böttcher, E.H.;  Bimberg, D. 

Buried InAlGaAs-InP waveguides: Etching, overgrowth, and characterization
In: IEEE Photonics Technology Letters, Vol. 10, 1998, Issue 1, S. 114-116, 10.1109/68.651128

Khan, A.;  Iqbal, M. Z.;  Qurashi, U. S.;  Yamaguchi, M.;  Zafar, N.;  Dadgar, A.;  Bimberg, D. 

Characteristics of alpha-radiation-induced deep level defects in p-type InP grown by metal-organic chemical vapor deposition
In: JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES {\\&amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;} REVIEW PAPERS, Vol. 37, Issue 8, S. 4595--4602, 1998

Strittmatter, A.;  Krost, A.;  Schatke, K.;  Bimberg, D.;  Bläsing, J.;  Christen, J. 

Epitaxial growth of GaN on silicon substrates by low-pressure MOCVD using AlAs, AlAs/GaAs, and AIN buffer layers
In: Materials Science Forum, Vol. 264-268, 1998, Issue PART 2, S. 1145-1148

Dadgar, A.;  Stenzel, O.;  Kohne, L.;  Naser, A.;  Strassburg, M.;  Stolz, W.;  Bimberg, D.;  Schumann, H.;   

Growth of Ru doped semi-insulating InP by low pressure metalorganic chemical vapor deposition
In: JOURNAL OF CRYSTAL GROWTH, Vol. 195, Issue 1-4, S. 69--73, 1998

Kollakowski, St.;  Böttcher, E.H.;  Strittmatter, A.;  Bimberg, D. 

High-speed InGaAs/InAIGaAs/InP waveguide-integrated MSM photodetectors for 1.3-1.55μm wavelength range
In: Electronics Letters, Vol. 34, 1998, Issue 6, S. 587-589

Engel, Th.;  Strittmatter, A.;  Passenberg, W.;  Umbach, A.;  Schlaak, W.;  Dröge, E.;  Seeger, A.;  Steingrüber, R.;  Mekonnen, G.G.;  Unterbörsch, G.;  Bach, H.-G.;  Böttcher, E.H.;  Bimberg, D. 

Narrow-band photoreceiver OEIC on InP operating at 38 GHz
In: IEEE Photonics Technology Letters, Vol. 10, 1998, Issue 9, S. 1298-1300, 10.1109/68.705622

Dadgar, A.;  Stenzel, O.;  Naser, A.;  Iqbal, M. Z.;  Bimberg, D.;  Schumann, H., 

Ruthenium: A superior compensator of InP
In: APPLIED PHYSICS LETTERS, Vol. 73, Issue 26, S. 3878--3880, 1998

Buchbeitrag

Engel, Th.;  Strittmatter, A.;  Passenberg, W.;  Droege, E.;  Umbach, A.;  Schlaak, W.;  Steingrueber, R.;  Seeger, A.;  Mekonnen, G.G.;  Unterboersch, G.;  Bach, H.G.;  Boettcher, E.H.;  Bimberg, D. 

38 GHz narrow band photoreceiver OEIC with MSM photodetector and HEMT amplifier
In: European Conference on Optical Communication, ECOC, Vol. 1, 1998, S. 63-64

Engel, Th.;  Strittmatter, A.;  Passenberg, W.;  Seeger, A.;  Steingrueber, R.;  Mekonnen, G.G.;  Unterboersch, G.;  Bimberg, D. 

Design, fabrication and characterization of narrow band photoreceiver OEICs based on InP
In: Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS, Vol. 1, 1998, S. 75-76

Droege, E.;  Boettcher, E.H.;  Kollakowski, St.;  Strittmatter, A.;  Reimann, O.;  Steingrueber, R.;  Umbach, A.;  Bimberg, D. 

Distributed MSM photodetectors for the long-wavelength range
In: European Conference on Optical Communication, ECOC, Vol. 1, 1998, S. 57-58

Droege, E.;  Boettcher, E.H.;  Kollakowski, St.;  Strittmatter, A.;  Reimann, O.;  Steingrueber, R.;  Umbach, A.;  Bimberg, D. 

Distributed millimeter-wave InGaAs metal-semiconductor-metal photodetector
In: Proceedings of the International Topical Meeting on Microwave Photonics, MWP, Technical Digest, 1998, S. 173-176

Kollakowski, St.;  Droege, E.;  Boettcher, E.H.;  Strittmatter, A.;  Reimann, O.;  Bimberg, D. 

Waveguide-integrated InP/InGaAs/InAlGaAs MSM photodetector for operation at 1.3 and 1.55 μm
In: Conference Proceedings - International Conference on Indium Phosphide and Related Materials, 1998, S. 266-268

1997

Begutachteter Zeitschriftenartikel

Dadgar, A.;  Kohne, L.;  Hyeon, J. Y.;  Grundemann, T.;  Stenzel, O.;  Strassburg, M.;  Kuttler, M.;  Heitz, R.;  Bimberg, D.;  Schumann, H. 

4d- and 5d-transition metal acceptor doping of InP
In: JOURNAL OF CRYSTAL GROWTH, Vol. 170, Issue 1-4, S. 173--176, 1997

Dadgar, A.;  Engelhardt, R.;  Kuttler, M.;  Bimberg, D.;   

Capacitance transient study of the deep Fe acceptor in indium phosphide
In: PHYSICAL REVIEW B, Vol. 56, Issue 16, S. 10241--10248, 1997

Böttcher, E.H.;  Dröge, E.;  Strittmatter, A.;  Bimberg, D. 

Polarisation-insensitive high-speed InGaAs metal-semiconductor-metal photodetectors
In: Electronics Letters, Vol. 33, 1997, Issue 10, S. 912-914

Khan, A.;  Qurashi, U. S.;  Zafar, N.;  Iqbal, M. Z.;  Dadgar, A.;  Bimberg, D. 

Radiation-induced deep levels in p-InP
In: DEFECTS IN SEMICONDUCTORS - ICDS-19, PTS 1-3, Vol. 258-2, S. 843--848, 1997

Parveen, S.;  Khan, A.;  Qurashi, U. S.;  Zafar, N.;  Iqbal, M. Z.;  Kohne, L.;  Dadgar, A.;  Bimberg, D. 

Related deep levels in p-InP and their interaction with alpha radiation
In: DEFECTS IN SEMICONDUCTORS - ICDS-19, PTS 1-3, Vol. 258-2, S. 831--836, 1997

Kollakowski, St.;  Böttcher, E.H.;  Lemm, Ch.;  Strittmatter, A.;  Bimberg, D.;  Kräutle, H. 

Waveguide-integrated InP-InGaAs-InAlGaAs MSM photodetector with very-high vertical-coupling efficiency
In: IEEE Photonics Technology Letters, Vol. 9, 1997, Issue 4, S. 496-498, 10.1109/68.559400

1996

Begutachteter Zeitschriftenartikel

Dadgar, A.;  Ammerlahn, D.;  Naser, A.;  Heitz, R.;  Kuttler, M.;  Bimberg, D.;  Baber, N.;  Hyeon, J. Y.;  Schumann, H. 

Deep-level transient-spectroscopy study of rhodium in indium phosphide
In: PHYSICAL REVIEW B, Vol. 53, Issue 11, S. 7190--7196, 1996

Strittmatter, A.;  Kollakowski, S.;  Dröge, E.;  Böttcher, E.H.;  Bimberg, D. 

High speed, high efficiency resonant-cavity enhanced InGaAs MSM photodetectors
In: Electronics Letters, Vol. 32, 1996, Issue 13, S. 1231-1232

Buchbeitrag

Strittmatter, A.;  Kollakowski, St.;  Droege, E.;  Boettcher, E.H.;  Bimberg, D. 

High-frequency, long-wavelength resonant-cavity-enhanced InGaAs MSM photodetectors
In: European Conference on Optical Communication, ECOC, Vol. 1, 1996

1995

Begutachteter Zeitschriftenartikel

SCHEFFLER, H.;  Baber, N.;  Dadgar, A.;  Bimberg, D.;  WINTERFELD, J.;  Schumann, H. 

DEEP LEVELS IN HAFNIUM-DOPED AND ZIRCONIUM-DOPED INDIUM-PHOSPHIDE
In: PHYSICAL REVIEW B, Vol. 51, Issue 20, S. 14142--14146, 1995

Krost, A.;  BOHRER, J.;  Dadgar, A.;  SCHNABEL, R. F.;  Bimberg, D.;  HANSMANN, S.;  BURKHARD, H. 

HIGH-RESOLUTION X-RAY-ANALYSIS OF COMPRESSIVELY STRAINED 1.55 MU-M GAINAS/ALGAINAS MULTIQUANTUM-WELL STRUCTURES NEAR THE CRITICAL THICKNESS
In: APPLIED PHYSICS LETTERS, Vol. 67, Issue 22, S. 3325--3327, 1995

Naser, A.;  Dadgar, A.;  Kuttler, M.;  Heitz, R.;  Bimberg, D.;  Hyeon, J. Y.;  Schumann, H. 

THERMAL-STABILITY OF THE MIDGAP ACCEPTOR RHODIUM IN INDIUM-PHOSPHIDE
In: APPLIED PHYSICS LETTERS, Vol. 67, Issue 4, S. 479--481, 1995

1994

Begutachteter Zeitschriftenartikel

Bimberg, D.;  Dadgar, A.;  Heitz, R.;  KNECHT, A.;  Krost, A.;  Kuttler, M.;  SCHEFFLER, H.;  Naser, A.;  SROCKA, B.;  WOLF, T.;  ZINKE, T.;  Hyeon, J. Y.;  WERNIK, S.;  Schumann, H. 

NOVEL WAYS TO GROW THERMALLY STABLE SEMIINSULATING INP-BASED LAYERS
In: JOURNAL OF CRYSTAL GROWTH, Vol. 145, Issue 1-4, S. 455--461, 1994

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